BCR8PM-12LB-A8

BCR8PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0461-0200 Rev.2.00 Nov.08.2004 Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGTIII : 30 mA (20 mA)Note5 • Viso : 2000 V • Insulated Type • Planar Passivation Type Outline TO-220F 2 3 1 1 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.2.00, Nov.08.2004, page 1 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 80 26 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 113°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 10/1 Typ. — — — — — — — — — — — Max. 2.0 1.6 1.5 1.5 1.5 30Note5 30Note5 30Note5 — 3.7 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C/150°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.2.00, Nov.08.2004, page 2 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics 102 7 5 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 101 23 5 7 102 On-State Current (A) 3 2 10 7 5 3 2 1 Tj = 150°C Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 IRGT III Typical Example PG(AV) = 0.5W PGM = 5W IGM = 2A Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 10 –1 VGT = 1.5V IRGT I, IFGT I 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 7104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 10 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100 120 140 160 1 2 Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example Transient Thermal Impedance (°C/W) 102 2 3 5 7103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.2.00, Nov.08.2004, page 3 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 –1 10 1 3 On-State Power Dissipation (W) No Fins 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 120 t2.3 100 100 t2.3 60 60 t2.3 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads Ambient Temperature (°C) Case Temperature (°C) 140 140 120 100 80 60 40 20 0 0 2 4 0 0 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 2 4 6 8 10 12 14 16 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 –1 10 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) Rev.2.00, Nov.08.2004, page 4 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 Latching Current vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 1 3 Typical Example 102 7 5 4 3 2 Latching Current (mA) Distribution T2+, G– Typical Example 101 –60 –40 –20 0 20 40 60 80 100 120140 160 10 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 0 10 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Typical Example Tj = 125°C 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Commutation Characteristics (Tj = 125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C 101 7 5 Minimum Characteristics 3 2 0 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Value I Quadrant III Quadrant 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 10 70 10 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00, Nov.08.2004, page 5 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 10 7 5 3 2 10 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 2 3 Commutation Characteristics (Tj = 150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 3 2 10 70 10 0 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz Typical Example IFGT I IRGT I IRGT III III Quadrant I Quadrant Minimum Characteristics Value 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 C0 = 0.1µF R0 = 100Ω Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47µF R1 = 47 to 100Ω 6V V A 330Ω Test Procedure III Rev.2.00, Nov.08.2004, page 6 of 7 BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C) Package Dimensions TO-220F EIAJ Package Code Conforms JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10.5 max 5.2 2.8 5.0 1.2 17 3.6 13.5 min 1.3 max 0.8 8.5 φ 3.2 ± 0.2 2.54 2.54 0.5 2.6 4.5 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR8PM-12LB BCR8PM-12LB-A8 Straight type Vinyl sack 100 Type name +B Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.08.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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