BCR8PM-20L

BCR8PM-20L Triac Medium Power Use REJ03G0311-0100 Rev.1.00 Aug.20.2004 Features • • • • IT (RMS) : 8 A VDRM : 1000 V IFGTI, IRGTI, IRGTⅢ : 30 mA Viso : 2000 V • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220F 2 3 1 1 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 20 1000 1200 Unit V V Rev.1.00, Aug.20.2004, page 1 of 7 BCR8PM-20L Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 80 26 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 88°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 — 3.7 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 7 BCR8PM-20L Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) Tj = 125°C Tj = 25°C On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 PG(AV) = 0.5W PGM = 5W IGM = 2A Typical Example IRGT III VGT = 1.5V IRGT I, IFGT I IFGT I IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 7 BCR8PM-20L Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (°C/W) 103 On-State Power Dissipation (W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 No Fins 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16 102 101 100 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted 140 aluminum and greased 120 100 80 60 40 20 0 0 2 4 6 8 160 120 100 80 60 40 Ambient Temperature (°C) Curves apply regardless 140 of conduction angle Case Temperature (°C) 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 10 12 14 16 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 7 BCR8PM-20L Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 Typical Example Latching Current (mA) Distribution T2+, G– Typical Example 101 7 5 3 T +, G+ 2 2 Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 Typical Example Typical Example Tj = 125°C III Quadrant I Quadrant 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 3 Typical Example 2 Tj = 125°C 102 IT = 4A 7 τ = 500µs 5 VD = 200V 3 f = 3Hz 2 101 7 5 3 Minimum 2 Characteristics Value Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Typical Example IFGT I IRGT I IRGT III I Quadrant 100 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 III Quadrant Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Rev.1.00, Aug.20.2004, page 5 of 7 BCR8PM-20L Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330Ω 6V V A 330Ω Test Procedure I 6Ω Test Procedure II 6V V A 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR8PM-20L Package Dimensions TO-220F EIAJ Package Code Conforms JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10.5 max 5.2 2.8 5.0 1.2 17 3.6 13.5 min 1.3 max 0.8 8.5 φ 3.2 ± 0.2 2.54 2.54 0.5 2.6 4.5 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR8PM-20LA BCR8PM-20LA-A8 Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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