CR03AM-16-TB

CR03AM-16 Thyristor Low Power Use REJ03G0355-0100 Rev.1.00 Aug.20.2004 Features • IT (AV) : 0.3 A • VDRM : 800 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline TO-92 2 3 1 3 2 1 1. Cathode 2. Anode 3. Gate Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 16 800 960 640 800 960 640 Unit V V V V V V Rev.1.00, Aug.20.2004, page 1 of 7 CR03AM-16 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Symbol IT (RMS) IT (AV) ITSM I2 t Ratings 0.47 0.3 20 1.6 Unit A A A A2s W W V V A °C °C g Conditions Commercial frequency, sine half wave 180° conduction, Ta = 47°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 0.5 Average gate power dissipation PG (AV) 0.1 Peak gate forward voltage VFGM 6 Peak gate reverse voltage VRGM 6 Peak gate forward current IFGM 0.3 Junction temperature Tj – 40 to +110 Storage temperature Tstg – 40 to +125 Mass — 0.23 Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Typical value Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Symbol IRRM IDRM VTM VGT VGD IGT IH Rated value Min. Typ. Max. — — — — 0.2 1 — — — — — — — — 1.5 — 0.1 0.1 1.8 0.8 — 100 3 180 Unit mA mA V V V µA mA °C/W Test conditions Tj = 110°C, VRRM applied Tj = 110°C, VDRM applied, RGK = 1 kΩ Ta = 25°C, ITM = 4 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 ANote2 Tj = 110°C, VD = 1/2 VDRM, RGK = 1 kΩ Tj = 25°C, VD = 6 V, IT = 0.1 ANote2 Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient Thermal resistance Rth (j-a) Notes: 2. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1kΩ Switch IGT A2 2 V1 VGT TUT 60Ω 6V DC Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.1.00, Aug.20.2004, page 2 of 7 CR03AM-16 Performance Curves Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Rated Surge On-State Current 20 Ta = 25°C Surge On-State Current (A) 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 × 100 (%) Gate Characteristics 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 Typical Example Gate Voltage (V) 101 100 PG(AV) = 0.1W VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.3A 10–1 10–2 5 710 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 2 3 5 –1 0 1 2 Gate Current (mA) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) VFGM = 6V PGM = 0.5W Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Gate Trigger Voltage (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Distribution Typical Example IGT (25°C) = 35µA 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Time (s) Rev.1.00, Aug.20.2004, page 3 of 7 CR03AM-16 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 0.5 Average Power Dissipation (W) Ambient Temperature (°C) 0.4 θ = 30° 0.3 180° 120° 90° 60° 140 120 100 80 60 40 20 0 0 θ 360° Resistive, inductive loads Natural convection 0.2 θ 0.1 360° Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 θ = 30° 90° 180° 60° 120° 0.1 0.2 0.3 0.4 0.5 0 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) 0.5 Average Power Dissipation (W) 0.4 180° Ambient Temperature (°C) 60° θ = 30° 90° 120° 140 120 100 80 60 40 20 0 0 θ θ 360° Resistive loads Natural convection 0.3 0.2 0.1 θ θ 360° 0 Resistive loads 0 0.1 0.2 0.3 0.4 0.5 θ = 30° 60° 90° 120° 180° 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) 0.5 Average Power Dissipation (W) 0.4 Ambient Temperature (°C) θ = 30° 270° 180° 120° 90° DC 60° 140 120 100 80 60 40 20 0 0 Resistive, inductive loads Natural convection θ = 30° 60° θ 360° 0.3 0.2 θ 0.1 90° 120° 180° 270° DC 360° Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 CR03AM-16 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance 160 140 120 100 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 × 100 (%) 160 140 120 100 80 60 40 20 Typical Example RGK = 1kΩ × 100 (%) Typical Example Tj = 110°C 0 –40 –20 0 20 40 60 80 100 120 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Junction Temperature (°C) Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 200 180 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Holding Current vs. Junction Temperature 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 RGK = 1kΩ RGK = 1kΩ Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Holding Current (mA) Distribution Typical Example IGT(25°C) = 35µA Tj = 25°C Tj = 110°C Rate of Rise of Off-State Voltage (V/µs) Junction Temperature (°C) × 100 (%) 500 × 100 (%) Holding Current vs. Gate to Cathode Resistance Typical Example IGT(25°C) IH(1kΩ) 10µA 1.0mA #1 26µA 1.1mA #2 #1 #2 200 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 400 300 100 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 VD = 12V, Tj = 25°C Gate to Cathode Resistance (kΩ) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Typical Example Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 5 of 7 CR03AM-16 Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 4 3 2 Gate Trigger Current (µA) Typical Example IGT(DC) # 1 16µA # 2 65µA #1 103 7 5 4 3 2 #2 Tj = 25°C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.1.00, Aug.20.2004, page 6 of 7 CR03AM-16 Package Dimensions TO-92 EIAJ Package Code Conforms JEDEC Code Conforms Mass (g) (reference value) 0.23 Lead Material Cu alloy φ 5.0 max 4.4 1.25 1.25 Circumscribed circle φ 0.7 1.1 11.5 min 5.0 max Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR03AM-16 CR03AM-16-A6 CR03AM-16-TB Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 3.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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