CR04AM-12

CR04AM-12 Thyristor Low Power Use REJ03G0354-0200 Rev.2.00 Mar.01.2005 Features • IT (AV) : 0.4 A • VDRM : 600 V • IGT : 100 µA • Glass Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 3 1 3 2 1 1. Cathode 2. Anode 3. Gate Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Rev.2.00, Mar.01.2005, page 1 of 7 CR04AM-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Ratings 0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.23 Unit A A A A2s W W V V A °C °C g Conditions Commercial frequency, sine half wave 180° conduction, Ta = 54°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Min. — — — — 0.2 1 — — Typ. — — — — — — 1.5 — Max. 0.5 0.5 1.2 0.8 — 100Note2 3 150 Unit mA mA V V V µA mA °C/W Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Ta = 25°C, ITM = 1.2 A, instantaneous value Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 1 kΩ Junction to ambient Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1kΩ Switch IGT A2 2 V1 VGT TUT 6V DC 60Ω Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.2.00, Mar.01.2005, page 2 of 7 CR04AM-12 Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 5 10 Rated Surge On-State Current Ta = 25°C Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 × 100 (%) Gate Characteristics 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 Gate Voltage (V) 101 7 5V GT = 0.8V 3 (Tj = 25°C) 2 7 5 3 2 7 5 3 2 100 PG(AV) = 0.1W IGT = 100µA (Tj = 25°C) IFGM = 0.3V 10–1 VGD = 0.2V 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 Gate Current (mA) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) VFGM = 6V PGM = 0.5W Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Gate Trigger Voltage (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 Distribution Typical Example Transient Thermal Impedance (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 40 60 80 100 120 Junction Temperature (°C) Time (s) Rev.2.00, Mar.01.2005, page 3 of 7 CR04AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 60° 120° θ = 30° 90° 180° 140 120 100 80 60 40 20 0 0 θ 360° Resistive, inductive loads Natural convection θ 360° Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 90° 60° 120° 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 θ = 30° 90° 60° 120° 180° 140 120 100 80 60 40 20 0 0 θ θ 360° Resistive loads Natural convection θ θ 360° Resistive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 120° 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 90° 180° θ = 30° 60° 120° 270° DC 140 120 100 80 60 40 20 0 θ 360° Resistive, inductive loads Natural convection θ 360° Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 0 60° 120° 270° 90° 180° DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Rev.2.00, Mar.01.2005, page 4 of 7 CR04AM-12 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance 120 100 80 60 40 20 × 100 (%) 160 140 120 100 80 60 40 20 Typical Example × 100 (%) Typical Example RGK = 1kΩ 0 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Tj = 125°C 0 –1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Holding Current vs. Junction Temperature 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Typical Example Tj = 125°C RGK = 1kΩ Distribution Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Holding Current (mA) Typical Example IGT(25°C) = 35µA RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 Rate of Rise of Off-State Voltage (V/µs) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Holding Current vs. Gate Trigger Current 4.0 × 100 (%) 500 Holding Current (mA) 400 Typical Example IGT(25°C) IH(1kΩ) 0.9mA # 1 25µA Tj = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) 300 200 #1 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (kΩ) Gate Trigger Current (µA) Rev.2.00, Mar.01.2005, page 5 of 7 CR04AM-12 Turn-On Time vs. Gate Current 102 7 Typical Example 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Turn-Off Time vs. Junction Temperature 40 Turn-On Time (µs) Turn-Off Time (µs) VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Typical Example Distribution Gate Current (mA) Junction Temperature (°C) × 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width × 100 (%) 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 Gate Trigger Current (tw) Gate Trigger Current (DC) Typical Example IGT(DC) # 1 10µA # 2 65µA #1 #2 Tj = 25°C 101 100 2 3 4 5 7 101 102 7 5 3 2 2 3 4 5 7 102 Junction Temperature (°C) Gate Current Pulse Width (µs) Rev.2.00, Mar.01.2005, page 6 of 7 CR04AM-12 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Package Name TO-92 MASS[Typ.] 0.23g Unit: mm φ5.0Max 4.4 1.25 1.25 Circumscribed circle φ0.7 1.1 11.5Min 5.0Max Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR04AM-12 CR04AM-12-A6 CR04AM-12-TB Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name – Lead forming code Form A8 Taping 2000 Type name – TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 3.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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