CR05AS-8

CR05AS-8 Thyristor Low Power Use REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Features • IT (AV) : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 3 RENESAS Package code: PLZZ0004CB-A LZZ0004 Z (Package name: SOT-89) 2, 4 4 1 2 1. 2. 3. 4. Cathode Anode Gate Anode 4 3 3 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 8 (Mark CD) 400 500 320 400 320 Unit V V V V V REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 1 of 8 CR05AS-8 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Ratings 0.79 0.5 10 0.4 0.1 0.01 6 6 0.1 – 40 to +125 – 40 to +125 50 Unit A A A A2s W W V V A °C °C mg Conditions Commercial frequency, sine half wave Note2 180° conduction, Ta = 57°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Rated value Min. Typ. Max. — — 0.1 — — 0.1 — — 0.2 20 — — — — — — — — 1.9 0.8 — 100Note3 3 70 Unit mA mA V V V µA mA °C/W Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied, RGK = 1 kΩ Ta = 25°C, ITM = 1.5 A, instantaneous value Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 1 kΩ Tj = 25°C, VD = 6 V, Note4 IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 1 kΩ Note2 Junction to ambient Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 3. If special values of IGT are required, choose item E from those listed in the table below if possible. Item B E IGT (µA) 20 to 50 20 to 100 The above values do not include the current flowing through the 1 kΩ resistance between the gate and cathode. 4. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1kΩ Switch IGT A2 2 V1 VGT TUT 6V DC 60Ω Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 2 of 8 CR05AS-8 Performance Curves Maximum On-State Characteristics 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 5 10 Rated Surge On-State Current Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) × 100 (%) Gate Characteristics 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Typical Example Gate Voltage (V) 101 VFGM = 6V PG(AV) = 0.01W VGT = 0.8V PGM = 0.1W 100 IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 10–1 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate Current (mA) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Distribution Typical Example Transient Thermal Impedance (°C/W) Gate Trigger Voltage (V) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25×25×t0.7 5 Aluminum Board 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Time (s) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 3 of 8 CR05AS-8 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 1.5 Average Power Dissipation (W) Ambient Temperature (°C) θ = 30° 60° 90° 120° 180° 1.0 25×25×t0.7 140 Aluminum Board 120 100 80 60 40 20 0 0 0.2 θ 360° Resistive, inductive loads Natural convection 0.5 θ 360° Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 180° 120° 0.4 0.6 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) Average Power Dissipation (W) 1.5 Ambient Temperature (°C) 90° θ = 30° 60° 120° 180° 25×25×t0.7 140 Aluminum Board 120 100 80 60 40 20 0 0 θ θ 360° Resistive loads Natural convection 1.0 0.5 θ θ 60° θ = 30° 0.2 0.4 120° 90° 0.6 360° Resistive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 180° 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) Average Power Dissipation (W) 1.5 Ambient Temperature (°C) 90° 180° θ = 30° 60° 120° 270° DC 25×25×t0.7 140 Aluminum Board 120 100 80 60 θ 360° 1.0 Resistive, inductive loads Natural convection 0.5 θ 360° DC 40 20 0 0 0.2 θ = 30° 60° 120° 90° 0.4 270° 180° 0.6 0.8 0 0 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 4 of 8 CR05AS-8 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance 120 100 80 60 40 20 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 × 100 (%) 160 140 120 100 80 60 40 20 × 100 (%) Typical Example Typical Example Tj = 125°C RGK = 1kΩ 0 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Junction Temperature (°C) Gate to Cathode Resistance (kΩ) × 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 120 100 80 60 40 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Holding Current vs. Junction Temperature Tj = 25°C IH (25°C) = 1mA IGT(25°C) = 25µA Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Holding Current (mA) Distribution Typical Example #2 #1 Typical Example 20 # 1 IGT(25°C = 10µA) # 2 IGT(25°C = 66µA) Tj = 125°C, RGK = 1kΩ 0 0 2 3 5 7101 2 3 5 7 102 2 3 5 7 10 3 10 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Rate of Rise of Off-State Voltage (V/µs) Junction Temperature (°C) × 100 (%) 500 × 100 (%) Holding Current vs. Gate to Cathode Resistance Typical Example IGT(25°C) IH(1kΩ) 13µA 1.6mA #1 59µA 1.8mA #2 #1 300 #2 200 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 400 100 0 10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 Tj = 25°C Gate to Cathode Resistance (kΩ) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Typical Example Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Junction Temperature (°C) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 5 of 8 CR05AS-8 Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 2 102 7 5 4 3 2 × 100 (%) #1 #2 Gate Trigger Current (tw) Gate Trigger Current (DC) Typical Example IGT(25°C) #1 10µA #2 66µA Tj = 25°C 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 6 of 8 CR05AS-8 Package Dimensions Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 JEITA Package Code SC-62 RENESAS Code PLZZ0004CB-A Package Name SOT-89 0.8 Min 0.44 Max MASS[Typ.] 0.48g (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Unit: mm 4.6Max 1.6 ± 0.2 1.5 ± 0.1 2.5 ± 0.1 0.8M 0.8Min 0.58Max 3.0 0.48Max 4.2Max Max 1.5 0.4 –0.05 +0.03 REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 7 of 8 CR05AS-8 Order Code Lead form Surface-mounted type Standard packing Taping Quantity 4000 Standard order code Type name – ET +Direction (1 or 2) + 4 Standard order code example CR05AS-8-ET14 Note : Please confirm the specification about the shipping in detail. REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: (21) 5877-1818, Fax: (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: (2) 796-3115, Fax: (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2007. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.0