CR12AM

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12AM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 7.0 φ3.6±0.2 2.5 4.5 0.5 2.6 123 24 1 2 3 4 ∗ Measurement point of case temperature • IT (AV) ......................................................................... 12A • VDRM ..............................................................400V/600V • IGT ..........................................................................30mA APPLICATION Switching mode power supply, ECR, motor control 3 1 CATHODE ANODE GATE ANODE TO-220 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 18.8 12.0 360 544 5 0.5 6 10 2 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 2.0 Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied Tc=25 °C, ITM =40A, Tj=25 °C, VD=6V, IT=1A Tj=125°C, VD=1/2VDRM Tj=25 °C, VD=6V, IT=1A Tj=25 °C, VD=12V Junction to case V1 Limits Min. — — — — 0.2 — — — Typ. — — — — — — 15 — Max. 2.0 2.0 1.6 1.5 — 30 — 1.2 Unit mA mA V V V mA mA °C/W V1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400 SURGE ON-STATE CURRENT (A) 360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 3 2 GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 VFGM = 6V PGM = 5W PG(AV) = 0.5W 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) VGT = 1.5V IGT = 30mA IFGM = 2A 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) 1.6 GATE TRIGGER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 TIME (s) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64 360° 180° 120° RESISTIVE, 90° 40 INDUCTIVE 60° LOADS 32 48 24 16 8 0 0 4 8 12 16 20 24 28 32 θ = 30° CASE TEMPERATURE (°C) 56 θ ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 360° 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 θ = 30° 60° 90° 180° 120° AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 140 120 100 80 60 40 20 0 0 θ = 30° 60° 90° 180° AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) θ 360° RESISTIVE, 120° INDUCTIVE LOADS NATURAL CONVECTION MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 48 40 32 24 16 8 0 0 4 8 12 θ θ θ = 30° 60° 180° 120° 90° 360° RESISTIVE LOADS 16 20 24 28 32 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (°C) 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 θ = 30° 90° 60° 120° 180° AMBIENT TEMPERATURE (°C) θ θ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 θ = 30° 60° 90° 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 180° θ θ 360° RESISTIVE LOADS 360° RESISTIVE 120° LOADS NATURAL CONVECTION AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 CASE TEMPERATURE (°C) 56 48 40 32 24 16 8 0 0 4 8 12 16 20 24 28 32 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30° ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 θ = 30° 90° 180° 60° 120° 270° θ 360° RESISTIVE, INDUCTIVE LOADS 180° 270° 120° DC 90° 60° DC AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AMBIENT TEMPERATURE (°C) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C ) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS θ NATURAL 120 360° CONVECTION 100 80 60 40 20 0 0 θ = 30° 60° 90° 120° 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DC 270° 180° BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 200 180 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 10.1mA 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) # 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 #2 #1 TYPICAL EXAMPLE IGT (25°C) # 1 10.6mA # 2 11.6mA 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TURN-ON TIME VS. GATE CURRENT 10.0 9.0 Ta = 25°C VD = 100V RL = 12Ω TYPICAL EXAMPLE IGT (25°C) # 11.2mA TURN-ON TIME (µs) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 # REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) 100 (%) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 100 (%) tw 0.1s GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999