CR3JM

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR3JM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 7.0 φ3.6±0.2 2.5 4.5 0.5 2.6 123 24 1 2 3 4 ∗ Measurement point of case temperature • IT (AV) ........................................................................ 0.8A • VDRM ....................................................................... 400V • IGT ..........................................................................50mA APPLICATION Automatic strobe flasher 3 1 CATHODE ANODE GATE ANODE TO-220 MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 480 400 480 Unit V V V V Symbol IT (AV) ITRM PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter Average on-state current Repetitive peak on-state current V1 Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine half wave, 180° conduction, Ta=37° C CM=1800µ F with discharge current Ratings 0.8 240 3.0 0.3 6 6 1 –40 ~ +125 –40 ~ +125 2.0 Unit A A W W V V A °C °C g V1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT Cc Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Commutating capacitor V2 Tj=25 °C, VRRM applied Tj=25 °C, VDRM applied Tc=25 °C, ITM =3A, Instantaneous value Tj=25 °C, VD =6V, RL=6Ω Tj=125°C, VD=1/2VDRM Tj=25 °C, VD =6V, RL=6Ω CM=1800µ F, VCM=350V, ITM =240A, L=50µH, V GK=–6V, Ta=25°C Test conditions Limits Min. — — — — 0.1 — — Typ. — — — — — — — Max. 0.1 0.1 1.8 2.0 — 50 2.8 Unit mA mA V V V mA µF V2. Refer to sections 3 on STROBE FLASHER APPLICATION. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 6 7 8 9 10 GATE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 ON-STATE CURRENT (A) VFGM = 6V VGT = 2.0V IGT = 50mA (Tj = 25°C) VGD = 0.1V PGM = 3W GATE VOLTAGE (V) PG(AV) = 0.3W IFGM = 1A 10–2 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) ON-STATE VOLTAGE (V) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (V) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 101 –20 –10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) 100 (%) COMMUTATING CHARACTERISTICS 3000 VCM = 350V Ta = 25°C L = 50µH SEE FIG.1 IG 0 tw t MAIN CAPACITOR (µF) 2500 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 2000 CC=4.0µF CC=1.5µF CC=2.0µF CC=2.5µF CC=3.0µF CC=3.5µF 1500 1000 500 100 140 180 220 260 300 PEAK ON-STATE CURRENT (A) 5.0 COMMUTATING CAPACITOR (µF) 100 (%) COMMUTATING CAPACITOR VS. PEAK ON-STATE CURRENT VCM = 350V 4.5 CM = 1000µF 4.0 L = 50µH Ta = 25°C 3.5 SEE FIG.1 3.0 2.5 2.0 1.5 1.0 0.5 0 100 140 180 220 260 300 COMMUTATING CAPACITOR VS. CASE TEMPERATURE 180 170 160 150 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 90 100 CASE TEMPERATURE (°C) TYPICAL EXAMPLE VCM = 350V ITM = 240A CM = 1800µF L = 50µH PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR (Tc = t°C) COMMUTATING CAPACITOR (Tc = 25°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 HIGH-SPEED SWITCHING THYRISTOR〉 CR3JM LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR L A ∗3 15kΩ CC VCM + CM − B 0.1µ 10kΩ 10Ω 22Ω T.U.T IT 1kΩ 0.1µ V3 The circuit between A-B is a substitute for Xenon flash tube. STROBE FLASHER APPLICATION Be sure to remember the following points when designing series type automatic strobe flashers using the CR3JM or CR3AMZ. 1. Rated repetitive peak on-state current ITRM The figure shows a turn-off characteristic test circuit. When a repetitive discharge current passes to the thyristor (TUT) through the load from the charged main capacitor (CM), the limiting value for the on-state peak current the thyristor can withstand is the rated repetitive peak on-state current. To ensure the current fed into the thyristor will not exceed this rated value, it is essential to select the appropriate main capacitor charging voltage V CM, the load (Xenon lamp) resistance and the anode reactor L described below. 2. Main capacitor CM In addition to its effect on the peak on-state current value, the capacitance of the main capacitor is an important factor determining the temperature rise of the thyristor junction. When the capacitance of the main capacitor becomes large, the discharge-time constant becomes great also, the temperature rise at the thyristor junction will be very serious and the commutating capability of the thyristor will decrease. When the device is turned off, damage may also be caused by the reverse voltage applied to the thyristor resulting in thermal run away. 3. Commutating Capacitor CC The capacitance values of the commutating Capacitor (CC) required for turning the thyristor off can be obtained from the following equation since the electric charge stored in this capacitor and the electric charge released during commutation are the same. i2T CC ≥ iT ·tq + + ∆CC (µF) VCC 2VCC · (–diT /dt)C Where iT : On-state current (A) immediately before turning off tq : Pulse turn-off time of the thyristor (µs) VCC : C C charging voltage (V) (–diT/dt)C : Rate of on-state current drop during commutation (A/µs) ∆CC : Loss component due to the impedance of the commutating circuit. In real conditions, however, the turn-off time will vary considerably depending on the temperature of the junction, and the gate reverse bias conditions during turn-off. It is necessary, therefore, to check the actual CC value and to adapt the settings (circuit conditions). The commutating characteristics graph shown in the figure relates to general circuit conditions. 4. Anode reactor L When the thyristor is turned on, the anode reactor L is used to control the rise of the discharge current from the main capacitor and the commutating circuit current in the commutating mode, respectively. The anode reactor L is suitable for use within the range of 20~100µH (air core). With this anode reactor inserted, the voltage during commutation may rise and the thyristor may lead to withstand voltage deterioration so that it is necessary to connect the 1~3A class rectifier diode in anti-parallel for protection, i.e., in the opposite direction to the flow of the discharge current. Feb.1999