CR6CM-12A-A8

CR6CM-12A Thyristor Medium Power Use REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Features • IT (AV) : 6 A • VDRM : 600 V • IGT : 10 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. Cathode Anode Gate Anode 3 1 12 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 1 of 6 CR6CM-12A Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Ratings 9.4 6 90 41 5 0.5 6 10 2 – 40 to +125 – 40 to +125 2.0 Unit A A A A2s W W V V A °C °C g Conditions Commercial frequency, sine half wave Note1 180° conduction, Tc = 96°C 50Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Min. — — — — 0.2 — — — Typ. — — — — — — 15 — Max. 2.0 2.0 1.7 1.0 — 10 — 2.5 Unit mA mA V V V mA mA °C/W Test conditions Tj = 125°C, VRRM applied Tj = 125°C, VDRM applied Tc = 25°C, ITM = 20 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Tj = 125°C, VD = 1/2 VDRM Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case. 2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 2 of 6 CR6CM-12A Performance Curves Maximum On-State Characteristics 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 200 Rated Surge On-State Current Tc = 125°C Surge On-State Current (A) 180 160 140 120 100 80 60 40 20 0 100 On-State Current (A) 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 50Hz) 101 7 5 3 2 100 7 5 3 2 VFGM = 6V PGM = 5W PG(AV) = 0.5W Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 102 7 5 3 2 × 100 (%) Gate Characteristics Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Typical Example VGT = 1V IGT = 10mA VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature Transient Thermal Impedance (°C/W) 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 Typical Example 101 100 10–1 –3 10 10–2 10–1 100 101 Junction Temperature (°C) Time (s) REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 3 of 6 CR6CM-12A Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Resistive, inductive loads Maximum Average Power Dissipation (Single-Phase Half Wave) 16 Average Power Dissipation (W) 12 10 8 6 4 2 0 0 2 4 6 θ = 30° 180° Case Temperature (°C) 14 140 120 100 80 60 40 20 0 0 θ 360° 120° 90° 60° 180° 120° 90° 60° θ = 30° θ 360° Resistive, inductive loads 8 10 12 2 4 6 8 10 12 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 Maximum Average Power Dissipation (Single-Phase Full Wave) 16 Average Power Dissipation (W) 14 12 10 8 6 4 2 0 0 2 4 6 8 θ = 30° 180° 120° Case Temperature (°C) θ θ 120 100 80 60 40 20 θ = 30° 2 4 60° 180° 120° 90° 360° Resistive loads 90° 60° θ θ 360° Resistive loads 10 12 0 0 6 8 10 12 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 140 Maximum Average Power Dissipation (Rectangular Wave) 16 Average Power Dissipation (W) 14 12 10 8 6 4 2 0 0 2 4 6 θ 360° Resistive, inductive loads Resistive, inductive loads Case Temperature (°C) 90° 60° θ = 30° DC 270° 180° 120° θ 360° 120 100 80 60 40 20 0 0 θ = 30° 180° 60° 90° 120° 270° DC 8 10 12 2 4 6 8 10 12 Average On-State Current (A) Average On-State Current (A) REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 4 of 6 CR6CM-12A Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 × 100 (%) 160 140 120 100 80 60 40 20 × 100 (%) Typical Example Typical Example Tj = 125°C 0 –60 –40 –20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (Tj = 25°C) Breakover Voltage (Tj = t°C) Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 80 70 × 100 (%) 103 7 5 3 2 102 7 5 3 2 Typical Example Typical Example Turn-Off Time (µs) Holding Current (Tj = t°C) Holding Current (Tj = 25°C) 60 50 40 30 Distribution 20 10 0 0 20 40 101 –60 –40 –20 0 20 40 60 80 100 120 140 IT = 6A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Typical Example Junction Temperature (°C) Gate Current Pulse Width (µs) REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 5 of 6 CR6CM-12A Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 4.5 1.3 3.2 16Max 3.8Max 1.0 12.5Min 0.8 7.0 φ3.6 2.54 2.54 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Standard order code example CR6CM-12A CR6CM-12A-A8 Note : Please confirm the specification about the shipping in detail. REJ03G1706-0100 Rev.1.00 Jul 03, 2008 Page 6 of 6 4.5Max Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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