CR8FM-12B#BB0

Data Sheet CR8FM-12B 600V - 8A - Thyristor R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Medium Power Use Features • IT (AV) : 8 A • VDRM : 600 V • IGT: 15 mA • Tj: 150°C • Insulated Type (Viso : 2000 V) • Planar Passivation Type Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) 2 3 1. Cathode 2. Anode 3. Gate 1 1 1 2 3 2 3 Application Power supply, motor control, heater control and other general purpose applications. Maximum Ratings Parameter Symbol Voltage class 12 Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage VRRM VRSM 600 720 V V DC reverse voltage Repetitive peak off-state voltage VR (DC) VDRM 480 600 V V DC off-state voltage VD (DC) 480 V Parameter RMS on-state current Symbol IT (RMS) Ratings 12.6 Unit A Conditions Average on-state current IT (AV) 8 A Surge on-state current ITSM 120 A I2 t 60 A2s Commercial frequency, sine half wave 180conduction, Tc = 106C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current I2t for fusing Peak gate power dissipation PGM 5 W Average gate power dissipation Peak gate forward voltage PG (AV) VFGM 0.5 6 W V Peak gate reverse voltage Peak gate forward current VRGM IFGM 10 2 V A Junction temperature Storage temperature Tj Tstg –40 to +150 –40 to +150 C C Isolation voltage Note2 Viso 2000 V R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Ta=25C, AC 1 minute, each terminal to case Page 1 of 8 CR8FM-12B Data Sheet Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — — Typ. — — Max. 2.0 5.0 Unit mA mA Test conditions Tj = 125C, VRRM applied Tj = 150C, VRRM applied Repetitive peak off-state current IDRM — — — — 2.0 5.0 mA mA Tj = 125C, VDRM applied Tj = 150C, VDRM applied On-state voltage VTM — — 1.4 V Gate trigger voltage VGT — — 1.0 V Tc = 25C, ITM = 25 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1A Gate non-trigger voltage VGD 0.2 0.1 — — — — V V Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Gate trigger current Holding current IGT IH — — — 15 15 — mA mA Thermal resistance Rth (j-c) — — 3.7 C/W Tj = 25C, VD = 6 V, IT = 1A Tj = 25C, VD = 12 V Junction to caseNote1 Notes: 1. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. 2. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Page 2 of 8 CR8FM-12B Data Sheet Performance Curves Maximum On-State Characteristics Surge On-State Current (A) 101 1 2 3 4 80 40 101 102 Conduction Time (Cycles at 50Hz) Gate Characteristics Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IFGM = 2A VGT = 1V 100 I GT = 15 mA -1 10 VGD = 0.1V 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 120 On-State Voltage (V) VFGM = 6V 102 103 103 Typical Example 102 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 - 40 160 0 100 5 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 100 0 Gate Voltage (V) 200 Tj = 125°C 102 101 Rated Surge On-State Current 0 40 80 120 Junction Temperature (°C) R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 160 Transient Thermal Impedance (ºC/W) On-State Current (A) 103 101 100 -1 10 -2 10 10-3 10-2 10-1 100 101 Time (s) Page 3 of 8 CR8FM-12B Data Sheet Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 140 16 180º 120º 12 90º q = 30º 60º 8 q 4 0 360º Resistive, inductive loads 0 2 4 6 8 10 12 14 Case Temperature (ºC) Average Power Dissipation (W) 20 180º 60 120º 90º 40 60º q = 30º 2 4 6 8 10 14 12 16 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 16 180º 120º q = 30º 12 90º 60º 8 q 4 0 q 360º Case Temperature (ºC) Average Power Dissipation (W) Resistive, inductive loads 80 0 0 20 Resistive loads 0 2 4 6 8 10 12 q 14 360º 100 Resistive loads 80 60 180º 120º 40 0 0 16 q 120 90º 20 q = 30º 2 4 60º 6 8 10 12 14 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 20 160 180º 16 90º 120º DC 60º 12 270º q = 30º 8 q 4 0 0 2 4 6 8 360º Resistive, inductive loads 10 12 14 16 Average On-State Current (A) R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Resistive, inductive loads 140 Case Temperature (ºC) Average Power Dissipation (W) 360º 100 20 16 q 120 120 16 q 360º 100 80 60 40 20 0 0 60º 180º 270º q = 30º 90º 120º 2 6 8 4 10 DC 12 14 16 Average On-State Current (A) Page 4 of 8 Data Sheet Typical Example 140 120 100 80 60 40 20 0 - 40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125ºC 140 120 100 80 60 40 20 0 1 10 102 103 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 - 40 0 40 80 120 160 Junction Temperature (ºC) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150ºC 140 120 100 80 60 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/ms) Rate of Rise of Off-State Voltage (V/ms) Holding Current vs. Junction Temperature Turn-Off Time vs. Junction Temperature 103 100 Typical Example Turn-Off Time (ms) Breakover Voltage (dv/dt = vV/ms) Holding Current (Tj = tºC) Holding Current (Tj = 25ºC) × 100 (%) Breakover Voltage (dv/dt = 1V/ms) × 100 (%) Junction Temperature (ºC) × 100 (%) Breakover Voltage (dv/dt = 1V/ms) 160 Breakover Voltage (dv/dt = vV/ms) Breakover Voltage (Tj = tºC) Breakover Voltage (Tj = 25ºC) × 100 (%) Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = tºC) 100 (%) Repetitive Peak Reverse Voltage (Tj = 25ºC)× CR8FM-12B 102 80 IT = 8A, - di/dt = 5A/ms, VD = 300V, dv/dt = 20V/ms, VR = 50V 60 40 Typical Example 20 Distribution 101 - 40 0 40 80 120 Junction Temperature (ºC) R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 160 0 0 20 40 60 80 100 120 140 160 Junction Temperature (ºC) Page 5 of 8 CR8FM-12B Data Sheet Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -1 10 100 101 102 Gate Current Pulse Width (ms) R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Page 6 of 8 CR8FM-12B Data Sheet Package Dimensions Ordering code: #BG0, #BH0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS1099EJ0200 Rev.2.00 Sep. 11, 2018 Page 7 of 8 CR8FM-12B Data Sheet Package Dimensions Ordering code: #BB0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 15.87±0.20 f 3.18±0.10 12.98 ±0.30 Unit: mm Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number CR8FM-12B#BG0 Package TO-220FPA Quantity Note3 Remark 50 pcs./ tube Straight type Status Mass Production CR8FM-12B-#BG0 CR8FM-12B#BH0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube :Lead form type Straight type Mass Production CR8FM-12B-#BH0 CR8FM-12B#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube :Lead form type Straight type EOL Candidate Notes: 3. 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