CT30SM-12

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE CT30SM-12 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 φ 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ................................................................................ 600V ¡IC ......................................................................................... 30A ¡High Speed Switching ¡Low VCE Saturation Voltage q TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 600 ±20 ±30 30 60 250 –40 ~ +150 –40 ~ +150 4.8 Unit V V V A A W °C °C g Feb.1999 Typical value MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V VCE = 600V, VGE = 0V IC = 3.0mA, VCE = 10V IC = 30A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 600 — — 4.5 — — — — — — — — — Typ. — — — 6.0 2.5 1480 180 54 30 135 135 250 — Max. — ±0.5 1 7.5 3.0 — — — — — — — 0.50 Unit V µA mA V V pF pF pF ns ns ns ns °C/W VCC = 300V, Resistance load, IC = 30A, VGE = 15V, RGE = 20Ω Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C 50 COLLECTOR CURRENT IC (A) VGE = 20V OUTPUT CHARACTERISTICS (TYPICAL) 15V 12V Tj = 25°C 11V 40 8 30 10V 6 20 9V 4 IC = 60A 30A 10A 10 8V 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 50 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 5 4 COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C VCE = 10V Tj = 25°C 40 3 30 2 20 1 10 0 0 10 20 30 40 50 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (pF) SWITCHING TIME (ns) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 3 2 Cies 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 f = 1MHZ Coes SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 tf td(off) Tj = 25°C VCC = 300V VGE = 15V RG = 20Ω tr td(on) Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 VCC = 200V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth ( j–c) 7 5 3 2 16 300V 10–1 7 5 3 2 7 5 3 2 12 8 10–2 7 5 3 2 10–2 7 5 3 2 4 0 0 20 40 60 80 100 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999 GATE CHARGE Qg (nc)