CT60AM-18B

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr q w e r e ¡VCES ............................................................................... 900V ¡IC ......................................................................................... 60A ¡Integrated Fast Recovery Diode q TO-3PL APPLICATION Microwave ovens, electromagnetic cooking devices, rice-cookers MAXIMUM RATINGS (Tc = 25 °C) Symbol V CES VGES VGEM IC I CM IE PC Tj T stg Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature TC = 25°C VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 900 ± 20 ± 30 60 120 40 200 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Sep. 2000 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE ELECTRICAL CHARACTERISTICS Symbol Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Collector tail current Emitter-collector voltage Reverse recovery time Thermal resistance (IGBT part) Thermal resistance (Tj = 25° C unless otherwise noted) Test conditions Limits Min. 900 — Typ. — — Max. — 1 Unit V (BR) CES I CES I GES VGE(th) V CE(sat) Cies Coes Cres t d (on) tr t d (off) tf E tail I Ctail V EC Trr Rth (j-c) Rth (j-c) IC = 1mA, VGE = 0V VCE = 900V, VGE = 0V VGE = ± 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VCE = 15V VCE = 25V, VGE = 0V, f = 1MHz V mA µA V V pF pF pF µs µs µs µs mJ/pls A V µs °C/W °C/W — 2.0 — — — — — — 4.0 2.0 5000 125 85 0.05 0.12 0.30 0.25 0.6 6 — 0.5 — — ±0.5 6.0 2.7 — — — — — — — 1.0 12 3 2 0.63 4.0 IC = 60A, Resistance load, VCC = 300V, VGE = 15V, R G = 10Ω ICP = 60A, Tj = 125°C, dv/dt = 200V/µs IE = 60A, VGE = 0V IE = 60A, di/dt = 20A/µs Junction to case Junction to case — — — — — — — — — PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE VS.GATE-EMITTER VOLTAGE (TYPICAL) 5 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) PC = 200W TC = 25°C Pulse Test COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 200 160 15V 10V 9V 4 120 3 IC = 120A 60A 80 VGE = 20V 2 30A 15A 8V 40 7V 1 TC = 25°C Pulse Test 0 0 1 2 3 4 5 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Sep. 2000 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE COLLECTOR CURRENT VS. GATE-EMITTER VOLTAGE (TYPICAL) COLLECTOR CURRENT IC (A) VCE = 5V Pulse Test CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) CAPACITANCE Cies, Coes, Cres (pF) 200 160 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 f = 1MHZ Cies 120 80 25°C Coes 40 Cres 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) SWITCHING TIME (ns) SWITCHING TIME VS.GATE RESISTANCE (TYPICAL) 3 2 VCC = 300V VGE = 15V Tj = 25°C 3 2 102 7 5 3 2 101 0 10 23 5 7 101 td(off) tf tr 103 IC = 60A 7 5 3 2 102 7 5 30 10 23 tf td(off) tr td(on) Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω td(on) 23 5 7 102 5 7 101 23 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 IC = 60A Tj = 25°C TRANSFER CHARACTERISTICS (TYPICAL) 80 EMITTER CURRENT IE (A) VGE = 0V Pulse Test 16 64 12 VCE = 250V 400V 48 8 600V 32 TC = 25°C 4 16 0 0 80 160 240 320 400 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nc) EMITTER-COLLECTOR VOLTAGE VEC (V) Sep. 2000 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (25°C) THRESHOLD VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) 7.0 GATE-EMITTER THRESHOLD VOLTAGE VGS (th) (V) VCE = 400V IC = 20mA COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (t°C) BREAKDOWN VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) 1.4 VGE = 0V IC = 1mA 6.0 1.2 5.0 1.0 4.0 0.8 3.0 0.6 2.0 –50 0 50 100 150 0.4 –50 0 50 100 150 JUNCTION TEMPERATURE tj (°C) CHANNEL TEMPERATURE tj (°C) TRANSIENT THERMAL IMPEDANCE Zth (j – c) (°C/ W) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 2 TRANSIENT THERMAL IMPEDANCE Zth (j – c) (°C/ W) IGBT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS DIODE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 5 3 2 100 7 5 3 2 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 5 710–5 2 3 5 710–4 2 3 5 710–3 10–2 5 710–5 2 3 5 710–4 2 3 5 710–3 10–2 10–2 10–2 PULSE WIDTH tw (s) PULSE WIDTH tw (s) Sep. 2000