CT75AM-12

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 φ 3.2 6 1 2 1 1 2 3 20.6MIN. 2.5 26 4 0.5 5.45 5.45 3 4.0 wr ¡VCES ............................................................................... 600V ¡IC ......................................................................................... 75A ¡High Speed Switching ¡Low VCE Saturation Voltage q e q GATE w COLLECTOR e EMITTER r COLLECTOR TO-3PL APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 600 ±20 ±30 75 150 300 –40 ~ +150 –40 ~ +150 9.8 Unit V V V A A W °C °C g Feb.1999 Typical value MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V VCE = 600V, VGE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 600 — — 4.5 — — — — — — — — — Typ. — — — 6.0 2.5 3100 400 130 40 265 175 245 — Max. — ±0.5 1 7.5 3.0 — — — — — — — 0.42 Unit V µA mA V V pF pF pF ns ns ns ns °C/W VCC = 300V, Resistance load, IC = 75A, VGE = 15V, RGE = 10Ω Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 COLLECTOR CURRENT IC (A) VGE = 20V OUTPUT CHARACTERISTICS (TYPICAL) 15V Tj = 25°C 12V PC = 300W 10 Tj = 25°C 80 8 60 11V 6 40 10V 4 150A 75A 20 9V 2 30A 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 5 4 COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 100 VCE = 10V Tj = 25°C 80 3 60 2 40 1 20 0 0 20 40 60 80 100 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (pF) SWITCHING TIME (ns) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 Cies 3 2 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V f = 1MHZ SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 tr td(off) tf Coes td(on) Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω Cres 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 23 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 VCE = 200V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth ( j – c) 7 5 3 2 16 300V 10–1 7 5 3 2 7 5 3 2 12 8 10–2 7 5 3 2 10–2 7 5 3 2 4 0 0 40 80 120 160 200 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999 GATE CHARGE Qg (nc)