CY25AAJ-8

CY25AAJ-8 Nch IGBT for Strobe Flash REJ03G1376-0200 (Previous: MEJ02G0305-0101) Rev.2.00 Jul 07, 2006 Features • VCES : 400 V • ICM : 150 A • Drive voltage : 4 V Outline RENESAS Package code: PRSP0008DA-B (Package name: SOP-8 ) 5,6,7,8 5 8 4 1 1,2,3 4 1,2,3 : Emitter 4 : Gate 5,6,7,8 : Collector Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 ±6 ±8 150 – 40 to +150 – 40 to +150 Unit V V V A °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curves) Rev.2.00 Jul 07, 2006 page 1 of 4 CY25AAJ-8 Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Symbol V(BR) CES ICES IGES VGE (th) Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 1.5 Unit V µA µA V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA Performance Curves Maximum Pulse Collector Current 160 Pulse Collector Current ICM (A) 120 Tc = 70°C CM = 400 µF RG = 30 Ω 80 40 0 0 2 4 6 8 Gate-Emitter Voltage VGE (V) Rev.2.00 Jul 07, 2006 page 2 of 4 CY25AAJ-8 Application Example IXe Vtrig CM + – Trigger Signal Vtrig VCM RG VCE VG IGBT IGBT Gate Voltage VG VCM ICP CM VGE Recommended Operation Conditions 330 V 130 A 330 µF 5V Maximum Operation Conditions 350 V 150 A 400 µF — Xe Tube Current IXe Precautions on Usage 1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to give static electricity. 3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence condition) of main condenser (CM = 400 µF). Repetitive period under the full luminescence conditions is over 3 seconds. 4. Total gate operation time must be applied within 5,000 hours. Rev.2.00 Jul 07, 2006 page 3 of 4 CY25AAJ-8 Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-4.4x5-1.27 RENESAS Code PRSP0008DA-B Previous Code 8P2S-B MASS[Typ.] 0.07g 8 5 HE *1 E F NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 1 Index mark 4 c Reference Dimension in Millimeters Symbol *2 D A2 A1 *3 e y bp D E A2 A1 A bp c HE e y L Detail F Nom Max 5.0 5.2 4.4 4.6 1.5 0.1 0.2 0 1.8 0.35 0.4 0.5 0.13 0.15 0.2 0° 10° 5.7 6.0 6.3 1.12 1.27 1.42 0.1 0.2 0.4 0.6 Min 4.8 4.2 A Ordering Information Lead form Standard packing Quantity Standard order code Standard order code example CY25AAJ-8-T13 Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2)+3 Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 4 of 4 L Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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