CY25BAJ-8F

CY25BAJ-8F Nch IGBT for Strobe Flash REJ03G0285-0200 Rev.2.00 May 23, 2005 Features • Small surface mount package (TSSOP-8)  Terminal Pb free: PTSP0008JA-A (8P2J-A)  Complete Pb free: PTSP0008JB-B (TTP-8DV) • VDSS : 400 V • ICM : 150 A • Drive voltage : 4 V Outline TSSOP-8 5 8 4 1 4 3 2 1 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate 5 6 7 8 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 ±6 ±8 150 – 40 to +150 – 40 to +150 Unit V V V A °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) Rev.2.00, May 23,2005, page 1 of 3 CY25BAJ-8F Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Min. 450 — — 0.5 — Typ. — — — 0.7 4.0 Max. — 10 ±10 1.5 6.0 Unit V µA µA V V Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA VCE = 4 V, IC = 150 A Performance Curves Maximum Collector Current vs. Gate-Emitter Voltage 200 Pulse Collector Current ICM (A) Tc = 70°C CM = 400 µF RG = 30 Ω 150 100 50 0 0 2 4 6 8 Gate-Emitter Voltage VGE (V) Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is satisfied.) 3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V. Order Code Lead form Standard packing Quantity Standard order code Standard order code example CY25BAJ-8F-T13 Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Note: Please confirm the specification about the shipping in detail. Rev.2.00, May 23,2005, page 2 of 3 CY25BAJ-8F Package Dimensions JEITA Package Code P-TSSOP8-4.4x3-0.65 RENESAS Code PTSP0008JA-A Package Name 8P2J-A MASS[Typ.] 0.04g 8 5 *1 HE E F A2 1 4 Index mark A1 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. c *2 D Reference Symbol Dimension in Millimeters Min 2.9 4.3 Nom 3.0 4.4 1.0 1.2 0 0.2 0.14 0° 0.1 0.25 0.15 0.2 0.32 0.2 8° 6.4 0.65 0.13 0.10 0.3 0.5 0.7 6.6 Max 3.1 4.5 D A E A2 e y * 3 bp L A A1 x Detail F bp c HE e x y L 6.2 JEITA Package Code P-TSSOP8-4.4 × 3-0.65 RENESAS Code PTSP0008JB-B Package Name TTP-8DV MASS[Typ.] 0.034g *1 D 8 5 bp Index mark *2 E HE F 1 Z 4 *3 b p Terminal cross section NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. xM (Ni/Pd/Au plating) e c Reference Symbol Dimension in Millimeters Min Nom 3.00 4.40 Max 3.30 L1 D E A2 A1 A 0.03 0.07 0.10 1.10 A bp b1 0.15 0.20 0.25 A1 c 0.10 0.15 0.20 L c1 0° HE 6.20 6.40 0.65 0.13 0.10 0.805 0.40 0.50 1.0 0.60 8° 6.60 y Detail F e x y Z L L1 Rev.2.00, May 23,2005, page 3 of 3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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