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EL2228CY

EL2228CY

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP8

  • 描述:

    IC OPAMP VFB 2 CIRCUIT 8MSOP

  • 数据手册
  • 价格&库存
EL2228CY 数据手册
EL2228 ® Data Sheet May 3, 2007 Dual Low Noise Amplifier Features The EL2228 is a dual, low-noise amplifier, ideally suited to filtering applications in ADSL and HDSLII designs. It features low noise specification of just 4.9nV/√Hz and 1.2pA/√Hz, making it ideal for processing low voltage waveforms. • Voltage noise of only 4.9nV/√Hz The EL2228 has a -3dB bandwidth of 80MHz and is gainof-1 stable. It also affords minimal power dissipation with a supply current of just 4.5mA per amplifier. The amplifier can be powered from supplies ranging from ±2.5V to ±12V. • Gain-of-1 stable The EL2228 is available in a space saving 8 Ld MSOP package as well as the industry-standard 8 Ld SOIC. It is specified for operation over the -40°C to +85°C temperature range. FN7008.2 • Current noise of only 1.2pA/√Hz • Bandwidth (-3dB) of 80MHz -@ AV = +1 • Just 4.5mA per amplifier • 8 Ld MSOP package • ±2.5V to ±12V operation • Pb-free plus anneal available (RoHS compliant) Applications • ADSL filters Pinout • HDSLII filters EL2228 (8 LD SOIC, 8 LD MSOP) TOP VIEW • Ultrasound input amplifiers • Wideband instrumentation 8 VS+ VOUTA 1 VINA- 2 - • Communications equipment • Wideband sensors 7 VOUTB + VINA+ 3 - 6 VINB- + VS- 4 5 VINB+ Ordering Information PART NUMBER PART MARKING TEMP RANGE (°C) TAPE & REEL PACKAGE PKG. DWG. # EL2228CY N -40 to +85 - 8 Ld MSOP (3.0mm) MDP0043 EL2228CY-T13 N -40 to +85 13” 8 Ld MSOP (3.0mm) MDP0043 EL2228CY-T7 N -40 to +85 7” 8 Ld MSOP (3.0mm) MDP0043 EL2228CYZ (Note) BAAAV -40 to +85 - 8 Ld MSOP (3.0mm) (Pb-free) MDP0043 EL2228CYZ-T13 (Note) BAAAV -40 to +85 13” 8 Ld MSOP (3.0mm) (Pb-free) MDP0043 EL2228CYZ-T7 (Note) BAAAV -40 to +85 7” 8 Ld MSOP (3.0mm) (Pb-free) MDP0043 EL2228CS 2228CS -40 to +85 - 8 Ld SOIC (150 mil) MDP0027 EL2228CS-T13 2228CS -40 to +85 13” 8 Ld SOIC (150 mil) MDP0027 EL2228CS-T7 2228CS -40 to +85 7” 8 Ld SOIC (150 mil) MDP0027 EL2228CSZ (Note) 2228CSZ -40 to +85 - 8 Ld SOIC (150 mil) (Pb-free) MDP0027 EL2228CSZ-T13 (Note) 2228CSZ -40 to +85 13” 8 Ld SOIC (150 mil) (Pb-free) MDP0027 EL2228CSZ-T7 (Note) 2228CSZ -40 to +85 7” 8 Ld SOIC (150 mil) (Pb-free) MDP0027 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2002, 2003, 2005, 2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners. EL2228 Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+28V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.3V, VS +0.3V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 40mA ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +12V, VS- = -12V, RL = 500Ω and CL = 3pF to 0V, RF = 420Ω and TA = +25°C Unless Otherwise Specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 3 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 0V 0.2 TCVOS Average Offset Voltage Drift Measured over operating temperature range -4 IB Input Bias Current VCM = 0V RIN Input Impedance 8 MΩ CIN Input Capacitance 1 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio -9 -4.5 -11.8 µV/°C -1 +10.4 µA V for VIN from -11.8V to +10.4V 60 90 dB for VIN from -10V to +10V 60 75 dB 60 75 dB AVOL Open-Loop Gain -5V ≤ VOUT ≤ 5V eN Voltage Noise f = 100kHz 4.9 nV/√Hz iN Current Noise f = 100kHz 1.2 pA/√Hz RL = 500Ω -10.3 -10 V RL = 250Ω -9.5 -9 V OUTPUT CHARACTERISTICS VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current RL = 500Ω 10 10.3 V RL = 250Ω 9.5 10 V RL = 10Ω 140 180 mA dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±10.8V to ±13.2V 65 83 IS Supply Current (per Amplifier) No load 4 5 44 65 V/µs 50 ns 80 MHz f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -86 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -79 dBc f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -93 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -70 dBc 6 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 1) ±2.5V square wave, measured 25% to 75% tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step BW -3dB Bandwidth HD2 2nd Harmonic Distortion HD3 3rd Harmonic Distortion NOTE: 1. Slew rate is measured on rising and falling edges 2 FN7008.2 May 3, 2007 EL2228 Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 500Ω and CL = 3pF to 0V, RF = 420Ω and TA = +25°C unless otherwise specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT 3 mV INPUT CHARACTERISTICS VOS Input Offset Voltage VCM = 0V 0.6 TCVOS Average Offset Voltage Drift Measured over operating temperature range 4.9 IB Input Bias Current VCM = 0V RIN Input Impedance 6 MΩ CIN Input Capacitance 1.2 pF CMIR Common-Mode Input Range CMRR Common-Mode Rejection Ratio -9 -4.5 -4.7 for VIN from -4.7V to +3.4V 60 µV/°C -1 +3.4 90 Open-Loop Gain -2.5V ≤ VOUT ≤ 2.5V eN Voltage Noise iN Current Noise V dB for VIN from -2V to +2V AVOL µA dB 60 72 dB f = 100kHz 4.7 nV/√Hz f = 100kHz 1.2 pA/√Hz RL = 500Ω -3.8 -3.5 V RL = 250Ω -3.7 -3.5 V OUTPUT CHARACTERISTICS VOL VOH ISC Output Swing Low Output Swing High Short Circuit Current RL = 500Ω 3.5 3.7 V RL = 250Ω 3.5 3.6 V RL = 10Ω 60 100 mA dB POWER SUPPLY PERFORMANCE PSRR Power Supply Rejection Ratio VS is moved from ±4.5V to ±5.5V 65 83 IS Supply Current (Per Amplifier) No load 3.5 4.5 35 50 V/µs 50 ns 75 MHz f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -90 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -71 dBc f = 1MHz, VO = 2VP-P, RL = 500Ω, AV = 2 -99 dBc f = 1MHz, VO = 2VP-P, RL = 150Ω, AV = 2 -69 dBc 5.5 mA DYNAMIC PERFORMANCE SR Slew Rate (Note 1) ±2.5V square wave, measured 25%-75% tS Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step BW -3dB Bandwidth HD2 2nd Harmonic Distortion HD3 3rd Harmonic Distortion NOTE: 1. Slew rate is measured on rising and falling edges 3 FN7008.2 May 3, 2007 EL2228 Typical Performance Curves Non-Inverting Frequency Response for Various RF Inverting Frequency Response for Various RF 4 4 3 2 RF = 1kΩ 1 RF = 420Ω 0 -1 RF=200Ω -2 RF=0Ω -3 -4 -5 VS = ±12V AV = +1 RL = 500Ω -6 100k Normalized Gain (dB) Normalized Gain (dB) 3 2 RF = 100Ω 1 -1 RF = 1kΩ -2 -3 -4 -5 1M -6 1M 100M 10M VS = ±12V AV = -1 RL = 500Ω Frequency (Hz) Non-Inverting Frequency Response (Gain) 2 Inverting Frequency Response (Gain) 4 VS=±12V RF=420Ω RL=500Ω 3 AV = 1 1 0 AV = 2 -1 AV = 10 -2 AV = 5 -3 -4 Normalized Gain (dB) Normalized Gain (dB) 3 -5 2 VS = ±12V RF = 420Ω 1 AV = -1 0 -1 AV = -10 AV = -2 -2 AV = -5 -3 -4 -5 -6 100k 1M -6 100k 100M 10M 1M Frequency (Hz) Inverting Frequency Response (Phase) Non-Inverting Frequency Response (Phase) 135 90 90 45 -45 AAVV= =55 -90 -135 AVA=10 V = 10 -180 -270 10M AV = -5 -90 -135 -225 1M AV = -2 -45 AV = -10 -180 V VSS=±12 = ±12V V RF = 420Ω R RFL=420 = 500Ω -315 100k AV = -1 0 AAVV= =22 Phase (°) Phase (°) 45 AAVV= =11 0 -270 VS = ±12V RF = 420Ω RL = 500Ω -315 100k 100M 1M 2 1 Non-Inverting Frequency Response for Various Input Signal Levels VS = ±12V RF = 420Ω RL = 500Ω AV = +1 VIN = 100mVPP -1 VIN = 1VPP -2 VIN = 2VPP -3 -4 -6 100k 4 3 0 -5 100M Non-Inverting Frequency Response for Various RL VIN = 500mVPP 1M 10M Frequency (Hz) 4 Normalized Gain (dB) Normalized Gain (dB) 3 10M Frequency (Hz) Frequency (Hz) 4 100M 10M Frequency (Hz) 135 -225 100M 10M Frequency (Hz) 4 RF = 420Ω 0 2 1 -1 RL = 50Ω -2 RL = 150Ω -3 -4 -5 100M RL = 1kΩ 0 VS = ±12V AV = +1 RF = 420Ω -6 100k RL = 500Ω 1M 10M 100M Frequency (Hz) FN7008.2 May 3, 2007 EL2228 Typical Performance Curves (Continued) Non-Inverting Frequency Response for Various CL 4 4 3 CL = 30pF 2 Normalized Gain (dB) Normalized Gain (dB) 3 Non-Inverting Frequency Response for Various Output DC Levels 1 0 -1 CL = 3pF -2 -3 CL = 10pF VS = ±12V RF = 420Ω RL = 500Ω AV = +1 -4 -5 -6 100k 2 VO = 0 -1 -2 -3 -4 VS = ±12V RF = 420Ω RL = 500Ω AV = +1 -6 100k 100M 10M 60 40 G=2 0 2.5 G = 10 4.5 6.5 8.5 10.5 -3dB Bandwidth vs ± Supply Voltage for Inverting Gains VS = ±12V RF = 420Ω RL = 500Ω AV = +1 20 15 G = -5 G = -10 5 0 2.5 12.5 4.5 Peaking (dB) Peaking (dB) VS = ±12V RF = 420Ω RL = 500Ω AV = +1 0.16 0.4 G = -1 0.12 0.08 G = -2 0.04 G=2 0 2.5 12.5 Peaking vs ± Supply Voltage for Inverting Gains 0.6 0.2 10.5 8.5 0.2 VS = ±12V RF = 420Ω RL = 500Ω AV = +1 G=1 6.5 Supply Voltage (±V) Peaking vs ± Supply Voltage for Non-inverting Gains 0.8 G = -2 10 Supply Voltage (±V) 1 100M 10M G = -1 -3dB Bandwidth (MHz) G=1 -3dB Bandwidth (MHz) 25 VS = ±12V RF = 420Ω RL = 500Ω AV = +1 G=5 VO = -5 Frequency (Hz) -3dB Bandwidth vs ± Supply Voltage for Noninverting Gains 20 VO =V+5 O= 1M Frequency (Hz) 80 VO = +10 0 -5 1M VO = -10 1 G = -10 G = 10 4.5 6.5 8.5 10.5 12.5 0 2.5 Supply Voltage (±V) 4.5 6.5 8.5 12.5 Small Signal Step Response VS = ±2.5V Small Signal Step Response VS = ±12V RF = 420Ω AV = 1 RL= 500Ω 20mV/div 10.5 Supply Voltage (±V) RF = 420Ω AV = 1 RL= 500Ω 20mV/div 50ns/div 5 50ns/div FN7008.2 May 3, 2007 EL2228 Typical Performance Curves (Continued) Large Signal Step Response VS = ±12V Large Signal Step Response VS = ±2.5V RF = 420Ω AV = 1 RL= 500Ω RF = 420Ω AV = 1 RL= 500Ω 0.5V/div 0.5V/div 50ns/div 50ns/div Group Delay vs Frequency 20 0.2 16 VS = ±12V RF = 420Ω RL = 150Ω AV = 2 0.15 12 AV = 2 8 4 dG (%) or dP (°) Group Delay (ns) Differential Gain/Phase vs DC Input Voltage at 3.58MHz AV = 1 0 -4 -8 VS = ±12V RF = 420Ω AV = 1 RL = 500Ω -12 -16 0.1 dP dG 0.05 0 -0.05 -0.1 -20 1M 10M -0.15 -1 100M 200M -0.5 0 0.5 1 DC Input Voltage (V) Frequency (Hz) Supply Current vs Supply Voltage Closed Loop Output Impedance vs Frequency 13.2 100 12 Output Impedance (Ω) Supply Current (mA) 10.8 9.6 8.4 7.2 6 4.8 3.6 2.4 10 1 0.1 1.2 0 0 1.4 2.8 4.2 5.6 7 8.4 0.01 10k 9.8 11.2 12.6 14 100k VS (±V) 10M 100M PSRR vs Frequency 100 10 80 -10 60 -30 PSRR (dB) CMRR (dB) CMRR vs Frequency 40 20 0 10 1M Frequency (Hz) VS-50 VS+ -70 VS = ±12 100 1k 10k 100k Frequency (Hz) 6 1M 10M 100M -90 1k 10k 100k 1M 10M 100M Frequency (Hz) FN7008.2 May 3, 2007 EL2228 Typical Performance Curves -40 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing (VS = ±12V) -50 -60 2ndHD -60 3rdHD -70 -80 -90 -100 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing (VS = ±2.5V) -50 Distortion (dB) Distortion (dB) (Continued) -70 3rdHD -80 -90 2ndHD -100 0 4 12 8 16 -110 20 0 0.5 1 Output Swing (VPP) -50 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing (Single-Ended) -50 -70 3rdHD 2ndHD -90 -100 VS = ±12V AV = 2 RF = 420Ω -110 -120 0 4 8 12 16 2ndHD -70 -80 3rdHD -90 -100 -110 20 0 0.5 1 1.5 2 2.5 Output Swing (VPP) Voltage and Current Noise vs Frequency Channel to Channel Isolation vs Frequency 18 0 16 -20 14 12 Isolation (dB) Voltage Noise (nV√Hz), Current Noise 2.5 VS = ±2.5V AV = 2 RF = 420Ω Output Swing (VPP) 10 8 EN 6 4 0 10 -40 B→C -60 -80 IN 2 A→B 100 1k 10k -100 100k 100k 1M Frequency (Hz) 11 100M 10M Frequency (Hz) Supply Current vs Temperature VS = ±12V 100 3dB Bandwidth vs Temperature VS = ±5V 90 Bandwidth (MHz) Supply Current (mA) 2 1MHz 2nd and 3rd Harmonic Distortion vs Output Swing (Single-Ended) -60 Distortion (dBc) Distortion (dBc) -60 -80 1.5 Output Swing (VPP) 10 9 80 70 60 0 -50 0 50 100 Junction Temperature (mA) 7 150 50 -40 10 60 110 160 Junction Temperature (°C) FN7008.2 May 3, 2007 EL2228 Typical Performance Curves (Continued) Input Bias Current vs Temperature Input Offset Voltage vs Temperature 2 Input Offset Voltage (mV) Input Bias Current (µA) -2 -4 -6 -8 -50 0 50 100 1 0 -1 -2 -50 150 0 Junction Temperature (°C) 100 150 Package Power Dissipation vs Ambient Temperature JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board 76 0.7 74 0.6 625mW Power Dissipation (W) Slew Rate (V/µs) Slew Rate vs Temperature 72 70 68 66 0.5 SO8 160°C/W 486mW 0.4 0.3 MSOP8 206°C/W 0.2 0.1 64 62 -50 0 50 100 150 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Temperature (°C) 1.4 50 Junction Temperature (°C) Package Power Dissipation vs Ambient Temperature JEDEC JESD51-7 High Effective Thermal Conductivity Test Board Power Dissipation (W) 1.2 1 909mW SO8 110°C/W 0.8 870mW 0.6 MSOP8 115°C/W 0.4 0.2 0 0 25 50 75 100 125 150 Ambient Temperature (°C) 8 FN7008.2 May 3, 2007 EL2228 Pin Descriptions 8 Ld MSOP 8 Ld SOIC PIN NAME PIN FUNCTION 1 1 VOUTA Output EQUIVALENT CIRCUIT VS+ VOUT Circuit 1 2 2 VINA- Input VS+ VIN+ VIN- VS- Circuit 2 3 3 VINA+ Input 4 4 VS- Supply 5 5 VINB+ Input 6 6 VINB- Input Reference Circuit 2 7 7 VOUTB Output Reference Circuit 1 8 8 VS+ Supply Applications Information Product Description The EL2228 is a dual voltage feedback operational amplifier designed especially for DMT ADSL and other applications requiring very low voltage and current noise. It also features low distortion while drawing moderately low supply current and is built on Elantec's proprietary high-speed complementary bipolar process. The EL2228 uses a classical voltage-feedback topology which allows them to be used in a variety of applications where current-feedback amplifiers are not appropriate because of restrictions placed upon the feedback element used with the amplifier. The conventional topology of the EL2228 allows, for example, a capacitor to be placed in the feedback path, making it an excellent choice for applications such as active filters, sample-and-holds, or integrators. Single-Supply Operation The EL2228 was designed to have a wide input and output voltage range. This design also makes the EL2228 an 9 Reference Circuit 2 excellent choice for single-supply operation. Using a single positive supply, the lower input voltage range is within 300mV of ground (RL = 500Ω), and the lower output voltage range is within 875mV of ground. Upper input voltage range reaches 3.6V, and output voltage range reaches 3.8V with a 5V supply and RL = 500Ω. This results in a 2.625V output swing on a single 5V supply. This wide output voltage range also allows single-supply operation with a supply voltage as high as 28V. Gain-Bandwidth Product and the -3dB Bandwidth The EL2228 has a gain-bandwidth product of 40MHz while using only 5mA of supply current per amplifier. For gains greater than 1, their closed-loop -3dB bandwidth is approximately equal to the gain-bandwidth product divided by the noise gain of the circuit. For gains of 1, higher-order poles in the amplifiers' transfer function contribute to even higher closed loop bandwidths. For example, the EL2228 have a -3dB bandwidth of 80MHz at a gain of 1, dropping to 9MHz at a gain of 5. It is important to note that the EL2228 is designed so that this “extra” bandwidth in low-gain FN7008.2 May 3, 2007 EL2228 application does not come at the expense of stability. As seen in the typical performance curves, the EL2228 in a gain of only 1 exhibited 0.5dB of peaking with a 500Ω load. where: • TMAX = Maximum ambient temperature • θJA = Thermal resistance of the package Output Drive Capability The EL2228 is designed to drive a low impedance load. It can easily drive 6VP-P signal into a 500Ω load. This high output drive capability makes the EL2228 an ideal choice for RF, IF, and video applications. Furthermore, the EL2228 is current-limited at the output, allowing it to withstand momentary short to ground. However, the power dissipation with output-shorted cannot exceed the power dissipation capability of the package. • PDMAX = Maximum power dissipation of 1 amplifier • VS = Supply voltage • IMAX = Maximum supply current of 1 amplifier • VOUTMAX = Maximum output voltage swing of the application • RL = Load resistance Driving Cables and Capacitive Loads Power Supply Bypassing And Printed Circuit Board Layout Although the EL2228 is designed to drive low impedance load, capacitive loads will decreases the amplifier's phase margin. As shown in the performance curves, capacitive load can result in peaking, overshoot and possible oscillation. For optimum AC performance, capacitive loads should be reduced as much as possible or isolated with a series resistor between 5Ω to 20Ω. When driving coaxial cables, double termination is always recommended for reflection-free performance. When properly terminated, the capacitance of the coaxial cable will not add to the capacitive load seen by the amplifier. As with any high frequency devices, good printed circuit board layout is essential for optimum performance. Ground plane construction is highly recommended. Pin lengths should be kept as short as possible. The power supply pins must be closely bypassed to reduce the risk of oscillation. The combination of a 4.7µF tantalum capacitor in parallel with 0.1µF ceramic capacitor has been proven to work well when placed at each supply pin. For single supply operation, where pin 4 (VS-) is connected to the ground plane, a single 4.7µF tantalum capacitor in parallel with a 0.1µF ceramic capacitor across pin 8 (VS+). Power Dissipation For good AC performance, parasitic capacitance should be kept to a minimum. Ground plane construction again should be used. Small chip resistors are recommended to minimize series inductance. Use of sockets should be avoided since they add parasitic inductance and capacitance which will result in additional peaking and overshoot. With the wide power supply range and large output drive capability of the EL2228, it is possible to exceed the 150°C maximum junction temperatures under certain load and power-supply conditions. It is therefore important to calculate the maximum junction temperature (TJMAX) for all applications to determine if power supply voltages, load conditions, or package type need to be modified for the EL2228 to remain in the safe operating area. These parameters are related as follows: T JMAX = T MAX + ( θ JA xPD MAXTOTAL ) where: • PDMAXTOTAL is the sum of the maximum power dissipation of each amplifier in the package (PDMAX) • PDMAX for each amplifier can be calculated as follows: V OUTMAX PD MAX = 2*V S × I SMAX + ( V S - V OUTMAX ) × ---------------------------R L 10 FN7008.2 May 3, 2007 EL2228 Small Outline Package Family (SO) A D h X 45° (N/2)+1 N A PIN #1 I.D. MARK E1 E c SEE DETAIL “X” 1 (N/2) B L1 0.010 M C A B e H C A2 GAUGE PLANE SEATING PLANE A1 0.004 C 0.010 M C A B L b 0.010 4° ±4° DETAIL X MDP0027 SMALL OUTLINE PACKAGE FAMILY (SO) INCHES SYMBOL SO-14 SO16 (0.300”) (SOL-16) SO20 (SOL-20) SO24 (SOL-24) SO28 (SOL-28) TOLERANCE NOTES A 0.068 0.068 0.068 0.104 0.104 0.104 0.104 MAX - A1 0.006 0.006 0.006 0.007 0.007 0.007 0.007 ±0.003 - A2 0.057 0.057 0.057 0.092 0.092 0.092 0.092 ±0.002 - b 0.017 0.017 0.017 0.017 0.017 0.017 0.017 ±0.003 - c 0.009 0.009 0.009 0.011 0.011 0.011 0.011 ±0.001 - D 0.193 0.341 0.390 0.406 0.504 0.606 0.704 ±0.004 1, 3 E 0.236 0.236 0.236 0.406 0.406 0.406 0.406 ±0.008 - E1 0.154 0.154 0.154 0.295 0.295 0.295 0.295 ±0.004 2, 3 e 0.050 0.050 0.050 0.050 0.050 0.050 0.050 Basic - L 0.025 0.025 0.025 0.030 0.030 0.030 0.030 ±0.009 - L1 0.041 0.041 0.041 0.056 0.056 0.056 0.056 Basic - h 0.013 0.013 0.013 0.020 0.020 0.020 0.020 Reference - 16 20 24 28 Reference - N SO-8 SO16 (0.150”) 8 14 16 Rev. M 2/07 NOTES: 1. Plastic or metal protrusions of 0.006” maximum per side are not included. 2. Plastic interlead protrusions of 0.010” maximum per side are not included. 3. Dimensions “D” and “E1” are measured at Datum Plane “H”. 4. Dimensioning and tolerancing per ASME Y14.5M-1994 11 FN7008.2 May 3, 2007 EL2228 Mini SO Package Family (MSOP) 0.25 M C A B D MINI SO PACKAGE FAMILY (N/2)+1 N E MDP0043 A E1 MILLIMETERS PIN #1 I.D. 1 B (N/2) e H C SEATING PLANE 0.10 C N LEADS SYMBOL MSOP8 MSOP10 TOLERANCE NOTES A 1.10 1.10 Max. - A1 0.10 0.10 ±0.05 - A2 0.86 0.86 ±0.09 - b 0.33 0.23 +0.07/-0.08 - c 0.18 0.18 ±0.05 - D 3.00 3.00 ±0.10 1, 3 E 4.90 4.90 ±0.15 - E1 3.00 3.00 ±0.10 2, 3 e 0.65 0.50 Basic - L 0.55 0.55 ±0.15 - L1 0.95 0.95 Basic - N 8 10 Reference - 0.08 M C A B b Rev. D 2/07 NOTES: 1. Plastic or metal protrusions of 0.15mm maximum per side are not included. L1 2. Plastic interlead protrusions of 0.25mm maximum per side are not included. A 3. Dimensions “D” and “E1” are measured at Datum Plane “H”. 4. Dimensioning and tolerancing per ASME Y14.5M-1994. c SEE DETAIL "X" A2 GAUGE PLANE L A1 0.25 3° ±3° DETAIL X All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 12 FN7008.2 May 3, 2007
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