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EL5106IS-T13

EL5106IS-T13

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC8_150MIL

  • 描述:

    IC OPAMP GP 1 CIRCUIT 8SOIC

  • 数据手册
  • 价格&库存
EL5106IS-T13 数据手册
DATASHEET EL5106, EL5306 FN7357 Rev 8.00 September 10, 2015 350MHz Fixed Gain Amplifiers with Enable The EL5106 and EL5306 are fixed gain amplifiers with a bandwidth of 350MHz. This makes these amplifiers ideal for today’s high speed video and monitor applications. They feature internal gain setting resistors and can be configured in a gain of +1, -1 or +2. With a supply current of just 1.5mA and the ability to run from a single supply voltage from 5V to 12V, these amplifiers are also ideal for handheld, portable or battery powered equipment. The EL5106 and EL5306 also incorporate an enable and disable function to reduce the supply current to 25µA typical per amplifier. Allowing the CE pin to float or applying a low logic level will enable the amplifier. The EL5106 is offered in the 6 Ld SOT-23 and the industry-standard 8 Ld SOIC packages and the EL5306 is available in the 16 Ld SOIC and 16 Ld QSOP packages. All operate over the industrial temperature range of -40°C to +85°C. Features • Pb-free available (RoHS compliant) • Gain selectable (+1, -1, +2) • 350MHz -3dB BW (AV = 2) • 1.5mA supply current per amplifier • Fast enable/disable • Single and dual supply operation, from 5V to 12V • Available in SOT-23 packages • 450MHz, 3.5mA product available (EL5108 and EL5308) Applications • Battery powered equipment • Handheld, portable devices • Video amplifiers • Cable drivers • RGB amplifiers Ordering Information PART NUMBER (Note 4) PART MARKING PACKAGE (RoHS Compliant) PKG. DWG. # EL5106IWZ-T7 (Notes 1, 2) BAFA (Note 3) 6 Ld SOT-23 P6.064A EL5106IWZ-T7A (Notes 1, 2) BAFA (Note 3) 6 Ld SOT-23 P6.064A EL5106ISZ-T13 (Notes 1, 2) (No longer available or supported) 5106ISZ 8 Ld SOIC (150 mil) M8.15E EL5306ISZ (Note 2) (No longer available, recommended replacement: EL5306IUZ) EL5306ISZ 16 Ld SOIC (150 mil) MDP0027 EL5306ISZ-T7 (Notes 1, 2) EL5306ISZ (No longer available, recommended replacement: EL5306IUZ-T7) 16 Ld SOIC (150 mil) MDP0027 EL5306ISZ-T13 (Notes 1, 2) EL5306ISZ (No longer available, recommended replacement: EL5306IUZ-13) 16 Ld SOIC (150 mil) MDP0027 EL5306IUZ (Note 2) 5306IUZ 16 Ld QSOP (150 mil) MDP0040 EL5306IUZ-T7 (Notes 1, 2) 5306IUZ 16 Ld QSOP (150 mil) MDP0040 EL5306IUZ-T13 (Notes 1, 2) 5306IUZ 16 Ld QSOP (150 mil) MDP0040 NOTES: 1. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD020. 3. The part marking is located on the bottom of the part. 4. For Moisture Sensitivity Level (MSL), please see device information page for EL5106, EL5306. For more information on MSL please see tech brief TB363. FN7357 Rev 8.00 September 10, 2015 Page 1 of 14 EL5106, EL5306 Pinouts EL5106 (8 LD SOIC) TOP VIEW NC 1 IN- 2 IN+ 3 ER VS-NG4 LO NO A AV LE AB+ L I D TE OR 8 PCE P SU OR 7 VS+ EL5306 (16 LD QSOP) (SOIC - NO LONGER AVAILABLE OR SUPPORTED) TOP VIEW INA+ 1 CEA 2 6 OUT CEB 4 CEC 7 VS- 2 5 CE FN7357 Rev 8.00 September 10, 2015 + - INC+ 8 13 OUTB 12 INB- NC 6 6 VS+ 15 OUTA 14 VS+ INB+ 5 OUT 1 + - + VS- 3 5 NC EL5106 (6 LD SOT-23) TOP VIEW IN+ 3 16 INA- 11 NC + - 10 OUTC 9 INC- 4 IN- Page 2 of 14 EL5106, EL5306 Absolute Maximum Ratings (TA = +25°C) Thermal Information Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . 13.2V Pin Voltages . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V to VS+ +0.5V Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 150, TA = +25°C Unless Otherwise Specified. DESCRIPTION CONDITIONS MIN TYP MAX UNIT AC PERFORMANCE BW -3dB Bandwidth AV = +1 250 MHz AV = -1 380 MHz AV = +2 350 MHz 20 MHz 4500 V/µs 16 ns 2.8 nV/Hz 6 pA/Hz BW1 0.1dB Bandwidth SR Slew Rate VO = -2.5V to +2.5V, AV = +2 tS 0.1% Settling Time VOUT = -2.5V to +2.5V, AV = 2 eN Input Voltage Noise iN+ IN+ Input Current Noise dG Differential Gain Error (Note 5) AV = +2 0.02 % dP Differential Phase Error (Note 5) AV = +2 0.04 ° 3000 DC PERFORMANCE VOS Specified Offset Voltage Output offset voltage including Ib*RF term TCVOS Input Offset Voltage Temperature Coefficient Measured from TMIN to TMAX 5 AE Gain Error VO = -3V to +3V, RL = 150 1 RF, RG Internal RF and RG -15 15 mV µV/°C 2.5 % 325  ±3.3 V INPUT CHARACTERISTICS CMIR Common Mode Input Range +IIN + Input Current RIN Input Resistance CIN Input Capacitance ±3 1.5 at IN+ 7 µA 2 M 1 pF OUTPUT CHARACTERISTICS VO RL = 150 to GND ±3.4 ±3.6 V RL = 1k to GND ±3.7 ±3.85 V Output Current RL = 10 to GND 60 100 mA ISON Supply Current - Enabled (per amplifier) No load, VIN = 0V 1.35 1.5 1.82 mA ISOFF Supply Current - Disabled (per amplifier) No load, VIN = 0V 12 25 µA PSRR Power Supply Rejection Ratio 75 IOUT Output Voltage Swing SUPPLY FN7357 Rev 8.00 September 10, 2015 DC, VS = ±4.75V to ±5.25V dB Page 3 of 14 EL5106, EL5306 Electrical Specifications PARAMETER VS+ = +5V, VS- = -5V, RL = 150, TA = +25°C Unless Otherwise Specified. (Continued) DESCRIPTION CONDITIONS MIN TYP MAX UNIT ENABLE tEN Enable Time 280 ns tDIS Disable Time 400 ns IIHCE CE Pin Input High Current CE = VS+ 1 5 25 µA IILCE CE Pin Input Low Current CE = VS- +1 0 -1 µA VIHCE CE Input High Voltage for Power-down VILCE CE Input Low Voltage for Enable VS+ -1 V VS+ -3 V NOTE: 5. Standard NTSC test, AC signal amplitude = 286mVP-P, f = 3.58MHz Pin Descriptions EL5106 (SO8) EL5106 (SOT23-6) 1, 5 2 4 EL5306 (SO16, QSOP16) PIN NAME 6, 11 NC Not connected 9, 12, 16 ININC-, INB-, INA- Inverting input FUNCTION EQUIVALENT CIRCUIT RG IN+ IN- RF CIRCUIT 1 Non-inverting input IN+ INA+, INB+, INC+ 3 3 1, 5, 8 4 2 3 VS- 6 1 10, 13, 15 OUT OUTC, OUTB, OUTA (Reference Circuit 1) Negative supply Output OUT RF CIRCUIT 2 7 6 14 VS+ Positive supply 8 5 2, 4, 7 CE, CEA, CEB, CEC Chip enable VS+ CE VSCIRCUIT 3 FN7357 Rev 8.00 September 10, 2015 Page 4 of 14 EL5106, EL5306 Typical Performance Curves 11 VS = ±5V RL = 150 3 9 1 GAIN (dB) NORMALIZED GAIN (dB) 5 AV = -1 -1 AV = 2 AV = 1 -3 -5 100k 1M 10M 100M AV = +2 VS = ±5V RL = 150 CL = 10pF CL = 6.8pF 7 CL = 2.2pF 5 CL = 0pF 3 1 100k 1G 1M FREQUENCY (Hz) AV = -1 RL = 150 AV = -1 1.2 350 AV = 1, 2 BW (MHz) DELAY TIME (ns) 450 RL = 150 0.8 AV = 2 250 AV = 1 0.4 0 1 10 100 150 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 1k FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 3. GROUP DELAY vs FREQUENCY FIGURE 4. BANDWIDTH vs SUPPLY VOLTAGE 0 RL = 150 -10 0.8 AV = -1 0.6 AV = 2 0.4 0.2 AV = 1 -20 PSRR (dB) 1 PEAKING (dB) 1G 100M FIGURE 2. FREQUENCY RESPONSE FOR VARIOUS CL FIGURE 1. FREQUENCY RESPONSE 1.6 10M FREQUENCY (Hz) -30 PSRR+ PSRR- -40 -50 -60 -70 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 VS (V) FIGURE 5. PEAKING vs SUPPLY VOLTAGE FN7357 Rev 8.00 September 10, 2015 -80 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 6. POWER SUPPLY REJECTION RATIO vs FREQUENCY Page 5 of 14 EL5106, EL5306 Typical Performance Curves (Continued) 1.60 100 1.55 IS (mA) IMPEDANCE () 1.50 10 1 IS- 1.45 IS+ 1.40 1.35 1.30 1.25 0.1 10k 100k 1M 1.20 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 100M 10M VS (V) FREQUENCY (Hz) FIGURE 7. OUTPUT IMPEDANCE vs FREQUENCY 0 -10 DISTORTION (dB) -20 FIGURE 8. SUPPLY CURRENT vs SUPPLY VOLTAGE (PER AMPLIFIER) VS = ±5V AV = 2 RL = 150 VOP-P = 2V M=100ns -30 -40 HD3 -50 CH1 2.00V/DIV -60 HD2 -70 CH2 1.00V/DIV -80 -90 0M 10M 20M 30M 40M 50M 60M FREQUENCY (Hz) FIGURE 9. HARMONIC DISTORTION vs FREQUENCY FIGURE 10. ENABLED RESPONSE 1.0 CH1 2.00V/DIV CH2 1.00V/DIV 909mW 0.9 POWER DISSIPATION (W) M=100ns JEDEC JESD51-3 LOW EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD SO16 (0.150”) JA = +110°C/W 0.8 0.7 625mW 0.6 633mW SO8 JA = +160°C/W 0.5 0.4 391mW 0.3 QSOP16 JA = +158°C/W SOT23-6 JA = +256°C/W 0.2 0.1 0 0 25 50 75 85 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 11. DISABLED RESPONSE FN7357 Rev 8.00 September 10, 2015 FIGURE 12. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE Page 6 of 14 EL5106, EL5306 Typical Performance Curves (Continued) POWER DISSIPATION (W) 1.4 JEDEC JESD51-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 1.250W 1.2 SO16 (0.150”) JA = +80°C/W 1.0 909mW 0.8 893mW SO8 JA = +110°C/W 0.6 435mW 0.4 0.2 0.1 0 SOT23-6 JA = +230°C/W 0 25 50 QSOP16 JA = +112°C/W 75 85 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 13. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE Applications Information Product Description The EL5106 and EL5306 are fixed gain amplifier that offers a wide -3dB bandwidth of 350MHz and a low supply current of 1.5mA. They work with supply voltages ranging from a single 5V to 12V and they are also capable of swinging to within 1.2V of either supply on the output. These combinations of high bandwidth and low power make the EL5106 and EL5306 the ideal choice for many low-power/high-bandwidth applications such as portable, handheld, or battery-powered equipment. For varying bandwidth and higher gains, consider the EL5191 with 1GHz on a 9mA supply current or the EL5162 with 300MHz on a 4mA supply current. Versions include single, dual, and triple amp packages with 5 Ld SOT-23, 16 Ld QSOP, and 8 Ld SOIC or 16 Ld SOIC outlines. Power Supply Bypassing and Printed Circuit Board Layout As with any high frequency device, good printed circuit board layout is necessary for optimum performance. Low impedance ground plane construction is essential. Surface mount components are recommended, but if leaded components are used, lead lengths should be as short as possible. The power supply pins must be well bypassed to reduce the risk of oscillation. The combination of a 4.7µF tantalum capacitor in parallel with a 0.01µF capacitor has been shown to work well when placed at each supply pin. the positive supply. For ±5V supply, this means that the amplifier will be enabled when CE is 2V or less, and disabled when CE is above 4V. Although the logic levels are not standard TTL, this choice of logic voltages allow the EL5106 and EL5306 to be enabled by tying CE to ground, even in 5V single supply applications. The CE pin can be driven from CMOS outputs. Gain Setting The EL5106 and EL5306 are built with internal feedback and gain resistors. The internal feedback resistors have equal value; as a result, the amplifier can be configured into gain of +1, -1, and +2 without any external resistors. Figure 14 shows the amplifier in gain of +2 configuration. The gain error is ±2% maximum. Figure 15 shows the amplifier in gain of -1 configuration. For gain of +1, IN+ and IN- should be connected together as shown in Figure 16. This configuration avoids the effects of any parasitic capacitance on the IN- pin. Since the internal feedback and gain resistors change with temperature and process, external resistor should not be used to adjust the gain settings. 325 325 IN- IN+ + FIGURE 14. AV = +2 Disable/Power-Down The EL5106 and EL5306 amplifiers can be disabled placing their output in a high impedance state. When disabled, the amplifier supply current is reduced to
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