EL5210, EL5410
®
Data Sheet
July 5, 2007
30MHz Rail-to-Rail Input-Output Op Amps
Features
The EL5210 and EL5410 are low power, high voltage rail-torail input-output amplifiers. The EL5210 contains two
amplifiers in one package and the EL5410 contains four
amplifiers. Operating on supplies ranging from 5V to 15V,
while consuming only 2.5mA per amplifier, the EL5410 and
EL5210 have a bandwidth of 30MHz (-3dB). They also
provide common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply
voltage.
• 30MHz -3dB bandwidth
The EL5410 and EL5210 also feature fast slewing and
settling times, as well as a high output drive capability of
30mA (sink and source). These features make these
amplifiers ideal for high speed filtering and signal
conditioning application. Other applications include battery
power, portable devices, and anywhere low power
consumption is important.
The EL5410 is available in a space-saving 14 Ld TSSOP
package, as well as the industry-standard 14 Ld SOIC. The
EL5210 is available in the 8 Ld MSOP and 8 Ld SOIC
packages. Both feature a standard operational amplifier pin
out. These amplifiers operate over a temperature range of
-40°C to +85°C.
FN7185.3
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier) = 2.5mA
• High slew rate = 33V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• Available in both standard and space-saving fine pitch
packages
• Pb-free plus anneal available (RoHS compliant)
Applications
• Driver for A-to-D Converters
• Data Acquisition
• Video Processing
• Audio Processing
• Active Filters
• Test Equipment
• Battery Powered Applications
• Portable Equipment
Pinouts
EL5410
(14 LD TSSOP, SOIC)
TOP VIEW
VOUTA 1
14 VOUTD
VINA- 2
VINA+ 3
13 VIND-
-
+
+
EL5210
(8 LD MSOP, SOIC)
TOP VIEW
VOUTA 1
VINA- 2
8 VS+
-
7 VOUTB
+
12 VIND+
VINA+ 3
-
6 VINB-
+
VS+ 4
11 VS-
VINB+ 5
VINB- 6
VOUTB 7
1
VS- 4
5 VINB+
10 VINC+
+
+
-
-
9 VINC8 VOUTC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003-2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL5210, EL5410
Ordering Information
PART NUMBER
PART MARKING
PACKAGE
PKG. DWG. #
EL5210CS
5210CS
8 Ld SOIC
MDP0027
EL5210CS-T7*
5210CS
8 Ld SOIC
MDP0027
EL5210CS-T13*
5210CS
8 Ld SOIC
MDP0027
EL5210CSZ (Note)
5210CSZ
8 Ld SOIC (Pb-free)
MDP0027
EL5210CSZ-T7* (Note)
5210CSZ
8 Ld SOIC (Pb-free)
MDP0027
EL5210CSZ-T13* (Note)
5210CSZ
8 Ld SOIC (Pb-free)
MDP0027
EL5210CY
J
8 Ld MSOP
MDP0043
EL5210CY-T7*
J
8 Ld MSOP
MDP0043
EL5210CY-T13*
J
8 Ld MSOP
MDP0043
EL5210CYZ (Note)
BATAA
8 Ld MSOP (Pb-free)
MDP0043
EL5210CYZ-T7* (Note)
BATAA
8 Ld MSOP (Pb-free)
MDP0043
EL5210CYZ-T13* (Note)
BATAA
8 Ld MSOP (Pb-free)
MDP0043
EL5410CS
5410CS
14 Ld SOIC
MDP0027
EL5410CS-T7*
5410CS
14 Ld SOIC
MDP0027
EL5410CS-T13*
5410CS
14 Ld SOIC
MDP0027
EL5410CSZ (Note)
5410CSZ
14 Ld SOIC (Pb-free)
MDP0027
EL5410CSZ-T7* (Note)
5410CSZ
14 Ld SOIC (Pb-free)
MDP0027
EL5410CSZ-T13* (Note)
5410CSZ
14 Ld SOIC (Pb-free)
MDP0027
EL5410CR
5410CR
14 Ld TSSOP
MDP0044
EL5410CR-T7*
5410CR
14 Ld TSSOP
MDP0044
EL5410CR-T13*
5410CR
14 Ld TSSOP
MDP0044
EL5410CRZ (Note)
5410CRZ
14 Ld TSSOP (Pb-free)
M14.173
EL5410CRZ-T7* (Note)
5410CRZ
14 Ld TSSOP (Pb-free)
M14.173
EL5410CRZ-T13* (Note)
5410CRZ
14 Ld TSSOP (Pb-free)
M14.173
*“-T7” or “-T13” suffix is for tape and reel. Please refer to TB347 for details on reel specifications.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
2
FN7185.3
July 5, 2007
EL5210, EL5410
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS + 0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(Note 4)
TYP
MAX
(Note 4)
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 1)
IB
Input Bias Current
RIN
Input Impedance
1
GW
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V ≤ VOUT ≤ 4.5V
65
80
dB
VCM = 0V
7
VCM = 0V
2
-5.5
µV/°C
60
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
-4.9
4.8
-4.8
V
4.9
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
IS
Supply Current (Per Amplifier)
No Load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
33
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.12
%
dP
Differential Phase (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.17
°
3
FN7185.3
July 5, 2007
EL5210, EL5410
Electrical Specifications
PARAMETER
VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(Note 4)
TYP
MAX
(Note 4)
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 1)
IB
Input Bias Current
RIN
Input Impedance
1
GW
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 5.5V
45
66
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 4.5V
65
80
dB
VCM = 2.5V
7
VCM = 2.5V
2
-0.5
µV/°C
60
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
100
4.8
200
mV
4.9
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No Load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
1V ≤ VOUT ≤ 4V, 20% to 80%
33
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.30
%
dP
Differential Phase (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.66
°
4
FN7185.3
July 5, 2007
EL5210, EL5410
Electrical Specifications
PARAMETER
VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = +25°C unless otherwise specified.
DESCRIPTION
CONDITION
MIN
(Note 4)
TYP
MAX
(Note 4)
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 1)
IB
Input Bias Current
RIN
Input Impedance
1
GW
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 15.5V
53
72
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 14.5V
65
80
dB
VCM = 7.5V
7
VCM = 7.5V
2
-0.5
µV/°C
60
+15.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -7.5mA
VOH
Output Swing High
IL = 7.5mA
ISC
IOUT
170
14.65
350
mV
14.83
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No Load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
1V ≤ VOUT ≤ 14V, 20% to 80%
33
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.10
%
dP
Differential Phase (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.11
°
NOTES:
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
4. Parts are 100% tested at +25°C. Over temperature limits established by characterization and are not production tested.
5
FN7185.3
July 5, 2007
EL5210, EL5410
Typical Performance Curves
EL5410 Input Offset Voltage Drift
EL5410 Input Offset Voltage Distribution
25
15
21
19
17
13
11
Input Offset Voltage Drift, TCVOS (µV/°C)
Input Bias Current vs Temperature
Input Offset Voltage vs Temperature
0.008
4
0.004
Input Bias Current (µA)
5
3
2
1
VS=±5V
0
-0.004
-0.008
0
-50
-10
30
70
110
-0.012
-50
150
-10
Temperature (°C)
70
110
150
110
150
Output Low Voltage vs Temperature
-4.85
4.96
-4.87
Output Low Voltage (V)
4.95
VS=±5V
IOUT=5mA
4.94
4.93
VS=±5V
IOUT=5mA
-4.89
-4.91
-4.93
4.92
4.91
-50
30
Temperature (°C)
Output High Voltage vs Temperature
Output High Voltage (V)
9
1
12
8
10
6
4
2
-0
-2
-4
0
-6
0
-8
5
-10
100
7
10
5
Quantity (Amplifiers)
200
-12
Quantity (Amplifiers)
300
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Typical
Production
Distortion
20
3
VS=±5V
TA=25°C
400
VS=±5V
Typical
Production
Distortion
15
500
-10
30
70
Temperature (°C)
6
110
150
-4.95
-50
-10
30
70
Temperature (°C)
FN7185.3
July 5, 2007
EL5210, EL5410
Typical Performance Curves
(Continued)
Open-Loop Gain vs Temperature
Slew Rate vs Temperature
33.85
90
Slew Rate (V/µS)
Open-Loop Gain (dB)
33.80
VS=±5V
RL=1kΩ
85
80
VS=±5V
33.75
33.70
33.65
75
33.60
70
-50
-10
30
70
110
33.55
-40
150
0
2.9
TA=25°C
160
VS=±5V
2.65
2.5
Supply Current (mA)
Supply Current (mA)
120
2.7
2.7
2.3
2.1
1.9
2.6
2.55
2.5
2.45
1.7
2.4
-50
1.5
4
8
12
16
20
-10
Supply Voltage (V)
30
70
110
150
8
10
Temperature (°C)
Differential Gain and Phase
Harmonic Distortion vs VOP-P
-30
0.25
VS=±5V
AV=2
RL=1kΩ
0.15
VS=±5V
AV=1
RL=1k
FIN = 1MHz
-40
0.05
-0.05
0
100
200
0.20
0.10
Distortion (dB)
Diff Gain (%)
80
EL5410 Supply Current per Amplifier vs Temperature
EL5410 Supply Current per Amplifier vs Supply Voltage
Diff Phase (°)
40
Temperature (°C)
Temperature (°C)
HD3
-50
HD2
-60
-70
0
-0.10
-80
0
100
IRE
7
200
0
2
4
6
VOP-P (V)
FN7185.3
July 5, 2007
EL5210, EL5410
Typical Performance Curves
(Continued)
Open Loop Gain and Phase vs Frequency
Frequency Response for Various RL
140
250
5
150
3
Phase
20
-50
Gain
VS=±5V TA=25°C
RL=1kΩ to GND
CL=12pF to GND
-20
-150
Magnitude (Normalized) (dB)
50
60
10kΩ
Phase (°)
Gain (dB)
100
-250
-60
10
100
10k
1k
100k
1M
10M
1kΩ
1
560Ω
0
-1
AV=1
VS=±5V
CL=12pF
-3
150Ω
-5
100M
1M
100k
Closed Loop Output Impedance vs Frequency
Frequency Response for Various CL
20
200
AV=1
VS=±5V
TA=25°C
1000pF
10
160
47pF
0
Output Impedance (Ω)
Magnitude (Normalized) (dB)
100pF
10pF
-10
RL=1kΩ
AV=1
VS=±5V
-20
-30
100k
120
80
40
1M
10M
0
10k
100M
100k
Maximum Output Swing vs Frequency
8
70
6
60
0
10k
CMRR (dB)
80
2
10M
30M
CMRR vs Frequency
10
4
1M
Frequency (Hz)
Frequency (Hz)
Maximum Output Swing (VP-P)
100M
10M
Frequency (Hz)
Frequency (Hz)
VS=±5V
TA=25°C
AV=1
RL=1kΩ
CL=12pF
Distortion
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