FK16UM-5

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE FK16UM-5 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.31Ω ¡ID ......................................................................................... 16A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-220 APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 250 ±30 16 48 16 48 125 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 ±30 — — 2 — — 6.5 — — — — — — — — — — Typ. — — — — 3 0.24 1.92 10.0 1050 220 45 20 40 110 50 1.5 — — Max. — — ±10 1 4 0.31 2.48 — — — — — — — — 2.0 1.00 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case IS = 16A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 POWER DISSIPATION PD (W) 160 DRAIN CURRENT ID (A) tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 120 80 40 0 0 50 100 150 200 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 125W DRAIN CURRENT ID (A) 40 VGS = 20V 10V 7V 30 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 20 PD = 125W 6V 16 TC = 25°C Pulse Test 5.5V 12 20 8 5V 10 5V 4 4.5V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test 16 0.5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.4 20V 0.3 VGS = 10V 12 ID = 30A 8 16A 4 8A 0 0 4 8 12 16 20 0.2 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 DRAIN CURRENT ID (A) TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C 75°C 125°C 32 24 16 8 0 0 4 8 12 16 20 10–1 0 10 VDS = 10V Pulse Test 23 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 25Ω td(off) 102 7 5 3 2 101 100 23 102 7 5 3 2 101 7 5 Ciss SWITCHING TIME (ns) 3 2 Coss tf tr td(on) 5 7 101 23 5 7 102 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 100 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 20 Tch = 25°C ID = 16A 16 VDS = 50V 100V 200V 8 TC = 125°C 32 VGS = 0V Pulse Test 75°C 12 24 25°C 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 0.8 102 7 5 3 2 101 0 10 trr 101 7 5 3 Tch = 25°C 2 Tch = 150°C 100 23 5 7 102 0.6 Irr 0.4 –50 0 50 100 150 23 5 7 101 CHANNEL TEMPERATURE Tch (°C) REVERSE RECOVERY CURRENT Irr (A) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 103 102 IS = 16A 7 7 5 5 VGS = 0V 3 VDD = 150V 3 2 2 102 7 5 3 2 101 7 5 3 2 100 101 23 57 102 trr 101 7 5 3 2 100 7 5 3 2 SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 0.05 0.02 0.01 PDM tw T D= tw T REVERSE RECOVERY TIME trr (ns) Irr Tch = 25°C Tch = 150°C 23 10–1 5 7 103 Single Pulse 10–2 –4 2 3 5710–3 2 3 5710–2 2 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 10 PULSE WIDTH tw (s) 10–1 7 5 3 2 SOURCE CURRENT dis/dt (–A/µs) Feb.1999 REVERSE RECOVERY CURRENT Irr (A) DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 150V 3 3 2 2