FK7KM-12

FK7KM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1377-0200 (Previous: MEJ02G0237-0101) Rev.2.00 Jul 07, 2006 Features • • • • • VDSS : 600 V rDS (ON) (max) : 1.63 Ω ID : 7 A Viso : 2000 V Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso — Ratings 600 ±30 7 21 7 21 35 – 55 to +150 – 55 to +150 2000 2.0 Unit V V A A A A W °C °C Vrms g Conditions VGS = 0 V VDS = 0 V AC for 1 minute, Terminal to case Typical value Rev.2.00 Jul 07, 2006 page 1 of 6 FK7KM-12 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth(ch-c) trr Min. 600 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 1.25 3.75 5.5 1100 125 17 30 30 100 35 1.5 — — Max. — — ±10 1 4 1.63 4.89 — — — — — — — — 2.0 3.57 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 3 A, VGS = 0 V Channel to case IS = 7 A, dis/dt = –100 A/µs Performance Curves Power Dissipation Derating Curve 50 5 3 2 Maximum Safe Operating Area Power Dissipation PD (W) Drain Current ID (A) 40 tw = 10µs 100µs 30 101 7 5 3 2 100 7 5 3 2 20 10 0 0 50 100 150 200 10–1 7 DC 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Tc = 25°C Single Pulse Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Rev.2.00 Jul 07, 2006 page 2 of 6 FK7KM-12 Output Characteristics (Typical) 20 PD = 35W Output Characteristics (Typical) 10 Tc = 25°C Pulse Test Drain Current ID (A) Drain Current ID (A) 16 VGS = 20V 10V 6V Tc = 25°C Pulse Test VGS = 20V 10V 6V 8 5V 6 12 8 5V 4 PD = 35W 4V 4 4V 0 0 10 20 30 40 50 2 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 40 On-State Resistance vs. Drain Current (Typical) 5.0 Tc = 25°C Pulse Test ID = 14A Tc = 25°C Pulse Test 32 4.0 24 3.0 VGS = 10V 20V 16 7A 8 3A 2.0 1.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 101 7 VDS = 10V Pulse Test 5 3 2 100 7 5 3 2 10–1 –1 10 23 5 7 100 23 5 7 101 Transfer Characteristics (Typical) 20 Drain Current ID (A) 16 Tc = 25°C VDS = 50V Pulse Test Tc = 25°C 12 125°C 75°C 8 4 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jul 07, 2006 page 3 of 6 FK7KM-12 Capacitance vs. Drain-Source Voltage (Typical) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss 103 7 5 Switching Characteristics (Typical) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω t d(off) 102 7 5 3 2 101 10–1 23 5 7 100 23 Capacitance C (pF) Switching Time (ns) 3 2 tf tr t d(on) 5 7 101 Crss Tch = 25°C 101 f = 1MHz 7V GS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 20 40 Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25°C ID = 7 A 16 VDS = 100V 200V 12 400V 8 Source Current IS (A) 32 24 Tc = 125°C 16 75°C 8 4 25°C 0 0.8 1.6 2.4 3.2 4.0 0 0 20 40 60 80 100 0 Gate Charge Qg (nC) On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 3A Pulse Test 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 Source-Drain Voltage VSD (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Rev.2.00 Jul 07, 2006 page 4 of 6 FK7KM-12 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Diode Reverse vs. Source Currnet Characteristic (Typical) 1.2 Reverce Recovery Time trr (ns) VGS = 0V ID = 1mA 1.0 3 2 102 t rr 7 5 3 2 101 0 10 Irr 3 2 101 7 5 3 2 0.8 0.6 0.4 –50 0 50 100 150 23 5 7 101 Tch = 25°C Tch = 150°C 100 23 5 7 102 Channel Temperature Tch (°C) Source Current IS (A) Transient Thermal Impedance Zth(ch-c) (°C/W) Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) Transient Thermal Impedance Characteristics 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10–1 7 5 3 2 0.2 0.1 3 2 t rr 102 7 5 3 2 101 7 5 101 101 7 5 3 2 100 Tch = 25°C 7 Tch = 150°C 5 3 23 5 7 10 Reverce Recovery Current Irr (ns) 5 Reverce Recovery Time trr (ns) 5 IS = 7A VGS = 0V 3 VDD = 250V 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T Irr 23 5 7 102 10–2 10–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 Source Current dis/dt (–A/µs) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vout Monitor Switching Waveform 90% RGEN Vin Vout 10% 10% 10% RGS VDD 90% td(on) tr 90% td(off) tf Rev.2.00 Jul 07, 2006 page 5 of 6 Reverce Recovery Current Irr (ns) 103 7 5 102 dis/dt = –100A/µs 7 VGS = 0V 5 VDD = 250V FK7KM-12 Package Dimensions Package Name TO-220FN JEITA Package Code  RENESAS Code PRSS0003AB-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Lead form Standard packing Quantity Standard order code Standard order code example FK7KM-12 Straight type Plastic Magazine (Tube) 1050 Type name Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. 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