FL12KM-7A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ŒŽ  2.6 ± 0.2 ¡10V DRIVE ¡VDSS ................................................................................ 350V ¡rDS (ON) (MAX) ................................................................ 0.4Ω ¡ID ............................................................................................ 7A ¡Viso ................................................................................ 2000V Œ Œ GATE  DRAIN Ž SOURCE Ž TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200µH VGS = 0V VDS = 0V Conditions Ratings Unit 4.5 ± 0.2 350 ±30 12 36 12 35 –55 ~ +150 –55 ~ +150 2000 2.0 V V A A A W °C °C V g Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 350V, VGS = 0V ID = 1mA, VDS = 10V Limits Min. 350 ± 30 — — 2.0 — — — — — — — — — — — — Typ. — — — — 3.0 0.32 1.90 10 1050 150 25 20 30 160 60 1.5 — Max. — — ± 10 1.0 4.0 0.40 2.40 — — — — — — — — 2.0 3.57 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source on-state resistance ID = 6A, VGS = 10V Drain-source on-state voltage ID = 6A, VGS = 10V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 6A, VGS = 10V, R GEN = RGS = 50 Ω IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 7 5 3 2 tw = 10µs 100µs POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) 40 101 7 5 3 2 30 1ms 10ms TC = 25°C Single Pulse 100ms 20 100 7 5 3 2 10 101 0 0 50 100 150 200 7 DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS =20V,10V,8V,6V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V,10V,8V,6V Tc = 25°C Pulse Test 5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 Tc = 25°C Pulse Test 8 12 5V 6 8 4 PD = 35W 2 4V 4 PD = 35W 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) Tc = 25°C Pulse Test Tc = 25°C Pulse Test 16 ID = 24A 0.8 VGS = 20V 10V 12 0.6 8 12A 0.4 4 6A 0.2 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 102 7 5 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 3 2 12 Tc = 25°C VDS = 10V Pulse Test 101 7 5 3 2 TC = 25°C 75°C 125°C VDS =10V Pulse Test 8 4 0 0 4 8 12 16 20 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 5 3 SWITCHING CHARACTERISTICS (TYPICAL) 103 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 2 102 7 5 3 2 td(off) tf tr 102 7 5 3 2 Crss Tch = 25°C f = 1MHZ VGS = 0V Coss td(on) Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50Ω 101 7 5 3 101 5 7 102 2 3 5 7103 7 5 100 23 5 7101 2 3 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VDS = VGS = 0V Pulse Test TC = GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) 50V 100V 200V 16 16 125°C 75°C 25°C 12 Tch = 25°C ID =12A 12 8 8 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 4.0 VDS = 10V ID = 1mA 3.0 100 7 5 3 2 VGS = 10V ID = 6A Pulse Test 2.0 1.0 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 1.2 100 7 5 3 2 1.0 VGS = 0V ID = 1mA 0.8 10–1 7 5 3 2 PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999 CHANNEL TEMPERATURE Tch (°C)