FL14KM-10A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som PR INA ELIM RY FL14KM-10A HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ŒŽ  2.6 ± 0.2 10V DRIVE q VDSS ................................................................................ 500V q rDS (ON) (MAX) .............................................................. 0.64Ω q ID ......................................................................................... 14A q Viso ................................................................................ 2000V q Œ Œ GATE  DRAIN Ž SOURCE Ž TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200µH VGS = 0V VDS = 0V Conditions Ratings 500 ±30 14 42 14 40 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL14KM-10A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V Limits Min. 500 ± 30 — — 2.0 — — — — — — — — — — — — Typ. — — — — 3.0 0.50 3.5 10.0 1500 180 60 30 60 250 115 1.5 — Max. — — ± 10 1.0 4.0 0.64 4.5 — — — — — — — — 2.0 3.13 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source on-state resistance ID = 7A, VGS = 10V Drain-source on-state voltage ID = 7A, VGS = 10V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, R GEN = RGS = 50 Ω IS = 7A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) 7 5 3 2 MAXIMUM SAFE OPERATING AREA tw = 10µs DRAIN CURRENT ID (A) 40 101 7 5 3 2 30 100µs 20 1ms 10ms Tc = 25°C Single Pulse 100 7 5 3 2 DC 10 0 0 50 100 150 200 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 Tc = 25°C VGS = 20V Pulse Test 10V 6V CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 40W Tc = 25°C Pulse Test DRAIN CURRENT ID (A) 30 VGS = 20V 10V DRAIN CURRENT ID (A) 40 16 12 PD = 40W 20 6V 8 5V 10 5V 4V 4 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL14KM-10A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 Tc = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 40 0.8 VGS = 10V 30 ID = 25A 0.6 20V 20 14A 7A 0.4 10 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 Tc = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 VDS = 10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 40 3 2 Tc = 25°C 30 101 7 5 3 2 125°C 75°C 20 10 0 0 4 8 12 16 20 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 Ciss 5 4 3 SWITCHING CHARACTERISTICS (TYPICAL) td(off) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 SWITCHING TIME (ns) 2 tf 102 7 5 4 3 2 tr Coss 102 7 5 3 2 td(on) 101 7 5 Tch = 25°C f = 1MHZ VGS = 0V Crss 101 7 5 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY FL14KM-10A HIGH-SPEED SWITCHING USE Nch POWER MOSFET SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 VDS = 100V GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) Tch = 25°C ID = 14A 16 SOURCE CURRENT IS (A) 200V 40 TC = 125°C 75°C 12 400V 30 8 20 25°C VGS = 0V Pulse Test 4 10 0 0 20 40 60 80 100 120 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 4 3 2 VGS = 10V ID = 7A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 10 VDS = 10V ID = 1mA 8 6 100 7 5 4 3 2 4 2 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 Duty = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 7 5 3 2 1.0 0.8 10–1 7 5 3 2 0.6 VGS = 0V ID = 1mA 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 7 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999 CHANNEL TEMPERATURE Tch (°C)