FL14KM-9A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FL14KM-9A FL14KM-9A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-9A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ➀➁➂ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS ............................................................................... 450V G rDS (ON) (MAX) .............................................................. 0.52Ω G ID ......................................................................................... 14A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 450 ±30 14 42 14 40 –55 ~ +150 –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A W °C °C V g Sep. 2001 L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FL14KM-9A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — — 3.0 0.40 2.80 8.0 1250 150 55 25 45 250 90 1.5 — Max. — — ±10 1 4.0 0.52 3.64 — — — — — — — — 2.0 3.13 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Sep. 2001