FL16KM-6A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE FL16KM-6A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ➀➁➂ 2.6 ± 0.2 ➁ q 10V DRIVE q VDSS ............................................................................... 300V q rDS (ON) (MAX) .............................................................. 0.35Ω q ID ......................................................................................... 16A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, Inverter fluorescent light sets, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200µH VGS = 0V VDS = 0V Conditions Ratings 300 ±30 16 48 16 35 –55 ~ +150 –55 ~ +150 Unit V V A A A W °C °C V g Mar. 2002 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ID = 1mA, VGS = 0V IGS = ± 100µA, V DS = 0V VGS = ±25V, VDS = 0V VDS = 300V, V GS = 0V ID = 1mA, V DS = 10V ID = 8A, V GS = 10V ID = 8A, V GS = 10V ID = 8A, V DS = 10V VDS = 25V, VGS = 0V, f = 1MHz (Tch = 25° C) Test conditions Limits Min. 300 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 0.29 2.32 10 950 175 20 15 30 150 60 1.5 — Max. — ± 10 1 4.0 0.35 2.80 — — — — — — — — 2.0 3.57 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 102 7 5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) 40 3 2 tw = 10µs 101 7 5 3 2 30 100µs 1ms 10ms 20 100 7 5 3 2 TC = 25°C Single Pulse 10 0 0 50 100 150 200 10–1 DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 35W TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25°C Pulse Test VGS = 20V 10V 7V 6V 5.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 40 VGS = 20V 10V 7V 6V 16 30 12 5V 20 5V 8 4.5V 10 4V 4 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Mar. 2002 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 ID = 30A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 16 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 0.4 VGS = 10V 20V 12 0.3 8 16A 0.2 4 8A 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 5 4 3 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 2 24 101 7 5 4 3 2 TC = 25°C 75°C 125°C 16 8 0 TC = 25°C VDS = 50V Pulse Test 100 7 5 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 0 4 8 12 16 20 100 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 3 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 4 3 2 103 7 5 3 2 Ciss tr 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V Coss td(on) 101 7 5 4 3 Crss 101 TCh = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Mar. 2002 MITSUBISHI Nch POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 20 TCh = 25°C ID = 16A VDS = 50V 100V 16 32 TC = 125°C 75°C 25°C 12 200V 24 8 16 4 8 0 0 10 20 30 40 50 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 8A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 1.2 100 0.2 7 5 0.1 3 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Mar. 2002