To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI POWER MOSFET
IMIN PREL
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY
FL20KM-5A
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
FL20KM-5A
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
q q q q q
2.6 ± 0.2
10V DRIVE VDSS ................................................................................ 250V rDS (ON) (MAX) .............................................................. 0.19Ω ID ......................................................................................... 20A Viso ................................................................................ 2000V
GATE DRAIN SOURCE
TO-220FN
APPLICATION Inverter type fluorescent light sets, SMPS
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200µH VGS = 0V VDS = 0V Conditions Ratings 250 ±30 20 60 20 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g
Aug. 1999
4.5 ± 0.2
MITSUBISHI POWER MOSFET
on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som
P
MIN RELI
ARY
FL20KM-5A
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Trr Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ±30V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V Limits Min. 250 ± 30 — — 2.0 — — — — — — — — — — — — — Typ. — — — — 3.0 0.15 1.50 12 1300 250 40 25 50 200 80 1.5 — 300 Max. — — ± 10 1.0 4.0 0.19 1.90 — — — — — — — — 2.0 3.57 — Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance ID = 10A, VGS = 10V Drain-source on-state voltage ID = 10A, VGS = 10V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V Channel to case IS = 20A, VGS = 0V, dis/dt = –100A/ µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
7 5 3 2 tw = 10µs 100µs 1ms 10ms 100ms
DRAIN CURRENT ID (A)
40
101
30
7 5 3 2 7 5 3 2 7 5 3 2 Tc = 25°C Single Pulse
100
20
10
10-1
DC
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
PD = 35W VGS = 20V
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 7V 10V 6V 5V Tc = 25°C Pulse Test
DRAIN CURRENT ID (A)
10V Tc = 25°C Pulse Test 6V
DRAIN CURRENT ID (A)
40
16
30
12
20
8
PD = 35W
10
5V
4
4V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Aug. 1999
MITSUBISHI POWER MOSFET
on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som
P
MIN RELI
ARY
FL20KM-5A
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
Tc = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
16
0.32
VGS = 10V
12
ID = 40A
0.24
20V
8
0.16
4
20A 10A
0.08 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50 102
7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
40
3 2
Tc = 25°C 75°C 125°C
30
101
7 5 3 2 VDS = 10V Pulse Test
20
10
0
Tc = 25°C VDS = 10V Pulse Test
0
4
8
12
16
20
100 0 10
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
3 2 5 4 3 Ciss
SWITCHING CHARACTERISTICS (TYPICAL)
103
CAPACITANCE Ciss, Coss, Crss (pF)
7 5 3 2
td(off)
SWITCHING TIME (ns)
2
102
7 5 4 3 2
tf tr
102
7 5 3 2 Coss
101
7 5 3
Tch = 25°C f = 1MHZ VGS = 0V 23 5 7 100 2 3 5 7 101 2 3
Crss
101
7 5 7 102 2 5 5 7 100 2 3
td(on) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 5 7 101 2 3 5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Aug. 1999
MITSUBISHI POWER MOSFET
on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som
P
MIN RELI
ARY
FL20KM-5A
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
TC = 25°C 75°C
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20
GATE-SOURCE VOLTAGE VGS (V)
Tch = 25°C ID = 20A VDS = 50V
16
40
12
100V 200V
30
125°C
8
20
VGS = 0V Pulse Test
4
10
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
7 5 4 3 2 VGS = 10V ID = 10A Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
4.0
3.0
100
7 5 4 3 2
2.0
1.0
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2 Duty = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM
tw T D= tw T
1.2
100
7 5 3 2
1.0
0.8
10–1
7 5 3 2
0.6
VGS = 0V ID = 1mA
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
Aug. 1999
CHANNEL TEMPERATURE Tch (°C)
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