To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
FL7KM-12A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
➀➁➂
➁
2.6 ± 0.2
G 10V DRIVE G VDSS ............................................................................... 600V G rDS (ON) (MAX) ................................................................ 1.3Ω G ID ........................................................................................... 7A
➀
➀ GATE ➁ DRAIN ➂ SOURCE ➂
TO-220FN
APPLICATION SMPS, Inverter fluorescent light sets, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 7 21 7 35 –55 ~ +150 –55 ~ +150 2000 2.0
Unit V V A A A W °C °C V g Sep. 2001
L = 200µH
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
(Tch = 25°C)
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 1.1 3.3 5.0 950 115 30 20 30 180 65 1.5 — Max. — ±10 1 4.0 1.3 3.9 — — — — — — — — 2.0 3.57
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 3A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
5 3 2 tw = 10µs
40
101
7 5 3 2 1ms 100µs
30
20
100
7 5 3 2 10ms
10
10–1 TC = 25°C 0 0 50 100 150 200
7 5
Single Pulse
DC
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
PD = 35W TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 6V 5V 4.5V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
VGS = 20V 10V 6V
8
12
5V
6
PD = 35W 4V
8
4.5V
4
4
4V
2
TC = 25°C Pulse Test
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
TC = 25°C Pulse Test
32
4
24
ID = 12A
3
16
7A
2
VGS = 10V
8
3A
1
0
0
4
8
12
16
20
00 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) 20 101
7 5 4 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
12
100
7 5 4 3 2
TC = 25°C 75°C 125°C
8
4
0
TC = 25°C VDS = 50V Pulse Test
0
4
8
12
16
20
10–1
VDS = 10V Pulse Test 2 3 4 5 7 100 2 3 4 5 7 101
10–1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2 3 2
SWITCHING CHARACTERISTICS (TYPICAL)
td(off)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5 4 3 2
103
7 5 3 2
Ciss
tf
tr td(on)
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V
Coss
101
7 5 4 3 TCh = 25°C VDD = 200V VGS = 10V 2 3 4 5 7 100 2 3 4 5 7 101 2
Crss
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep. 2001
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
20
TCh = 25°C ID = 7A
16
16
TC = 125°C 75°C 25°C
12
VDS = 100V 200V 400V
12
8
8
4
4
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 3.5A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
4.0
3.0
100
7 5 3 2
2.0
1.0
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 D = 1.0 3 0.5 2
1.2
100 0.2
7 5 0.1 3 0.05 2
1.0
0.8
PDM
tw
10–1
7 5 3 2 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
Sep. 2001
CHANNEL TEMPERATURE Tch (°C)
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