FS10AS-06

FS10AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G0240-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS(ON) (max) : 78 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Outline MP-3A 2, 4 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 10 40 10 10 40 30 – 55 to +150 – 55 to +150 0.32 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS10AS-06 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 60 — — 2.0 — — — — — — — — — — — — — Typ. — — — 3.0 58 0.29 9.0 600 180 60 18 22 30 17 1.0 — 55 Max. — ±0.1 0.1 4.0 78 0.39 — — — — — — — — 1.5 4.17 — Unit V µA mA V mΩ mV S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 5 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = –100 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 FS10AS-06 Performance Curves Drain Power Dissipation Derating Curve Drain Power Dissipation PD (W) 50 5 3 2 Maximum Safe Operating Area tw = 10µs Drain Current ID (A) 40 30 101 7 5 3 2 100 7 5 3 2 100µs 1ms 10ms DC 20 10 0 0 50 100 150 200 10–1 Tc = 25°C 7 Single Pulse 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 20 Output Characteristics (Typical) 10 VGS = 20V DRAIN CURRENT ID (A) VGS = 20V 7V 8V 6V 8V 12 Drain Current ID (A) 16 10V 8 PD = 30W 6V 10V 6 8 4 5V 4 5V Tc = 25°C Pulse Test 2 Tc = 25°C Pulse Test 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source On-State Resistance rDS(ON) (mΩ) On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 On-State Resistance vs. Drain Current (Typical) 100 Tc = 25°C Pulse Test 1.6 Tc = 25°C Pulse Test 80 1.2 60 VGS = 10V 20V 0.8 ID = 15A 10A 40 0.4 5A 20 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS10AS-06 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 4 3 2 101 7 5 4 3 2 100 100 2 3 4 5 7 101 2 3 4 5 7 102 Transfer Characteristics (Typical) 40 Drain Current ID (A) 32 Tc = 25°C VDS = 10V Pulse Test VDS = 5V Pulse Test 24 Tc = 25°C 16 75°C 125°C 8 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 Drain Current ID (A) Switching Characteristics (Typical) 102 7 5 4 3 2 Tch = 25°C f = 1MHz VGS = 0V Switching Time (ns) td(off) td(on) tf tr Capacitance (pF) Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 101 7 5 4 3 Tch = 25°C 2 VDD = 30V VGS = 10V RGEN = RGS = 50Ω 100 100 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) 20 40 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25°C ID = 10A 16 Source Current IS (A) 32 12 24 8 VDS = 10V 20V 40V 16 Tc = 125°C 75°C 25°C 4 8 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS10AS-06 On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V ID = 1/2 ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 PDM 0.6 0.4 –50 0 50 100 150 10–1 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 0.1 0.05 0.02 0.01 Single Pulse tw T tw D= T Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS10AS-06 Package Dimensions MP-3A EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 0.32 Lead Material Cu alloy 5.3 ± 0.2 1 ± 0.2 6.6 2.3 0.5 ± 0.1 10.4 max 6.1 ± 0.2 0.1 ± 0.1 2.5 min 0.76 ± 0.2 2.3±0.2 0.76 0.5 ± 0.2 1.4 ± 0.2 1 max Symbol 2.3 Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. A A1 A2 b D E e x y y1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS10AS-06-T13 FS10AS-06 Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Surface-mounted type Plastic Magazine (Tube) 75 Type name Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 1 Sales Strategic Planning Div. Keep safety first in your circuit designs! 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