FS10AS-2-T13

FS10AS-2 High-Speed Switching Use Nch Power MOS FET REJ03G0244-0200 Rev.2.00 Nov 21, 2006 Features • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 0.23 Ω ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 100 ±20 10 40 10 10 40 30 – 55 to +150 – 55 to +150 0.32 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value Rev.2.00 Nov 21, 2006 page 1 of 6 FS10AS-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 100 — — 2.0 — — — — — — — — — — — — — Typ. — — — 3.0 0.16 0.80 9.0 600 125 40 18 20 30 18 1.0 — 100 Max. — ±0.1 0.1 4.0 0.23 1.15 — — — — — — — — 1.5 4.17 — Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VGS = 10 V ID = 5 A, VDS = 5 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 5 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 5 A, VGS = 0 V Channel to case IS = 10 A, dis/dt = –100 A/µs Rev.2.00 Nov 21, 2006 page 2 of 6 FS10AS-2 Performance Curves Drain Power Dissipation Derating Curve Drain Power Dissipation PD (W) 50 5 3 2 Maximum Safe Operating Area tw = 10µs Drain Current ID (A) 40 30 101 7 5 3 2 100 7 5 3 2 100µs 1ms 10ms DC 20 10 0 0 50 100 150 200 10–1 Tc = 25°C 7 Single Pulse 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 20 Output Characteristics (Typical) 10 Tc = 25°C Pulse Test VGS = 20V 10V 7V Tc = 25°C Pulse Test VGS = 20V 10V 7V 6V Drain Current ID (A) 12 Drain Current ID (A) 16 8 6V PD = 30W 6 8 4 5V 2 4 5V 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source On-State Resistance rDS(ON) (Ω) On-State Voltage vs. Gate-Source Voltage (Typical) 5.0 On-State Resistance vs. Drain Current (Typical) 0.5 Tc = 25°C Pulse Test 4.0 Tc = 25°C Pulse Test 0.4 3.0 ID = 15A 0.3 2.0 10A 5A 0.2 VGS = 10V 20V 1.0 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Nov 21, 2006 page 3 of 6 FS10AS-2 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 VDS = 5V Pulse Test 5 4 3 2 Transfer Characteristics (Typical) 20 Drain Current ID (A) 16 Tc = 25°C VDS = 10V Pulse Test 12 Tc = 25°C 101 7 5 4 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 8 75°C 125°C 4 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 Drain Current ID (A) Switching Characteristics (Typical) 102 7 5 4 3 2 101 7 5 4 3 2 100 100 2 3 Switching Time (ns) Tch = 25°C f = 1MHz VGS = 0V td(off) td(on) tf tr Capacitance (pF) Ciss Coss Crss 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 5 7 101 2 3 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) 40 Gate-Source Voltage vs. Gate Charge (Typical) 20 Gate-Source Voltage VGS (V) Tch = 25°C ID = 10A 16 VGS = 0V Pulse Test Source Current IS (A) 32 12 24 8 VDS = 20V 50V 80V 16 Tc = 125°C 75°C 25°C 4 8 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.2.00 Nov 21, 2006 page 4 of 6 FS10AS-2 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 VGS = 10V ID = 1/2 ID Pulse Test VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 PDM 0.6 0.4 –50 0 50 100 150 10–1 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 0.1 0.05 0.02 0.01 Single Pulse tw D= T tw T Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.2.00 Nov 21, 2006 page 5 of 6 FS10AS-2 Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code  MASS[Typ.] 0.32g Unit: mm 1 ± 0.2 6.6 5.3 ± 0.2 2.3 0.5 ± 0.2 6.1 ± 0.2 10.4Max 0.1 ± 0.1 1Max 2.5Min 0.76 ± 0.2 0.76 0.5 ± 0.2 2.3 ± 0.2 2.3 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 Standard order code example FS10AS-2-T13 FS10AS-2 75 Type name Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00 Nov 21, 2006 page 6 of 6 1 1.4 ± 0.2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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