To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
FS10KMJ-3
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
123
2.6 ± 0.2
w
¡4V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) ........................................................... 160mΩ ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ............. 90ns ¡Viso ................................................................................ 2000V
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 10 40 10 10 40 25 –55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 120 125 0.60 18 1800 180 85 17 23 150 75 1.0 — 90 Max. — ±0.1 0.1 2.0 160 165 0.80 — — — — — — — — 1.5 5.00 —
Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
100ms 1ms
40
30
tw = 10ms
20
10
0
0
50
100
150
200
100 7 TC = 25°C 10ms 5 Single Pulse DC 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5
VGS = 10V 5V 4V 3V TC = 25°C Pulse Test
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 10V 5V 4V TC = 25°C Pulse Test 3V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
8
4
2.5V
6
3
4
2
2
2V
1
2V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test ID = 15A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
TC = 25°C Pulse Test VGS = 4V 10V
1.6
160
1.2
10A
120
0.8
5A
80
0.4
40 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
TC = 25°C 75°C 125°C VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
12
8
4
FORWARD TRANSFER ADMITTANCE yfs (S)
16
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 103 7 5 4 3 2 102 7 5 4 3 2
SWITCHING CHARACTERISTICS (TYPICAL)
Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω td(off)
CAPACITANCE Ciss, Coss, Crss (pF)
Ciss
SWITCHING TIME (ns)
tf
102 7 5 3 Tch = 25°C 2 f = 1MHZ 101
VGS = 0V
Coss Crss
tr td(on)
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
Tch = 25°C ID = 10A
8
VDS = 50V
16
6
80V
12
TC = 125°C
4
100V
8
75°C 25°C
2
4
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2
0.2
1.2
1.0
0.8
100 0.1 7 5 3 2 10–1 7 5 3 2
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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