FS10UMA-5A

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS10UMA-5A FS10UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING 10.5MAX. Dimensions in mm 4.5 ➃ 3.2 7.0 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 ➀➁➂ ➁➃ ➀ GATE ➁ DRAIN ➂ SOURCE ➃ DRAIN ➂ G 10V DRIVE G VDSS ............................................................................... 250V G rDS (ON) (MAX) .............................................................. 0.52Ω G ID ......................................................................................... 10A ➀ TO-220 APPLICATION CRT Display monitor, SMPS, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 250 ±20 10 30 10 65 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A A W °C °C g Sep. 2001 L = 200µH Typical value MITSUBISHI Nch POWER MOSFET FS10UMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 1.5 — Max. — ±0.1 1 4.0 0.52 2.60 — — — — — — — — 2.0 1.92 Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 80 101 7 5 3 2 tw = 10µs 100µs 1ms TC = 25°C Single Pulse DC 60 40 100 7 5 3 2 20 0 10–1 0 50 100 150 200 7 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,7V,6V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 DRAIN CURRENT ID (A) 16 TC = 2 5°C Pulse Test DRAIN CURRENT ID (A) 8 VGS = 20V,10V,7V,6V,5V PD = 65W 12 5V 6 8 PD = 65W 4V 4 4.5V TC = 2 5°C Pulse Test 4 2 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10UMA-5A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 TC = 2 5°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 16 0.8 12 ID = 20A 0.6 VGS = 10V 8 0.4 = 20V 4 10A 5A 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 3 2 TC = 25°C,75°C,125°C 12 8 100 7 5 3 2 4 0 TC = 2 5°C VDS = 10V Pulse Test 0 4 8 12 16 20 10–1 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 5 3 Ciss SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50Ω td(off) tf tr 3 2 td(on) 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 VGS = 0V f = 1MHz 101 2 3 5 7 100 2 3 SWITCHING TIME (ns) 2 CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 Coss Crss 5 7 101 2 3 5 7 102 2 101 7 5 7 100 2 3 5 7 101 2 3 57 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10UMA-5A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 TC = 25°C 75°C 125°C GATE-SOURCE VOLTAGE VGS (V) 20 16 VDS = 50V 100V 150V SOURCE CURRENT IS (A) 32 12 24 8 16 VGS = 0V Pulse Test 4 TCh = 25°C ID = 10A 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 100 7 5 3 2 2.0 1.0 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 = 0.01 PDM tw T D= tw T 1.2 100 7 5 3 2 1.0 0.8 10–1 7 5 3 2 Single Pulse 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Sep. 2001