FS10VSJ-2

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE FS10VSJ-2 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.3 3.0 +0.5 – 0 –0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 ± 0.4 ¡4V DRIVE ¡VDSS ............................................................................... 100V ¡rDS (ON) (MAX) ............................................................. 0.19Ω ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 95ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ± 20 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH (1.5) MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 0.14 0.16 0.70 13 800 125 45 14 15 65 40 1.0 — 95 Max. — ±0.1 0.1 2.0 0.19 0.21 0.95 — — — — — — — — 1.5 4.17 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 tw = 10ms 100ms 1ms 10ms DC 40 30 20 10 TC = 25°C Single Pulse 0 0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25°C Pulse Test VGS = 10V 6V 5V 4V 10 TC = 25°C Pulse Test VGS = 10V 6V 5V 4V 3V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 3V 6 2.5V 8 PD = 30W 4 4 2 2V 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 4.0 0.4 3.0 ID = 15A 0.3 VGS = 4V 2.0 10A 0.2 10V 1.0 5A 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 VDS = 5V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 12 TC = 25°C 75°C 125°C 8 4 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 VGS = 0V Ciss SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 td(off) tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) tr td(on) Coss Crss Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 Tch = 25°C ID = 10A VDS = 20V 8 32 6 50V 80V 24 4 16 TC = 125°C 2 8 75°C 25°C 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 1.2 1.0 D = 1.0 0.5 0.2 tw 0.8 PDM 0.1 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)