To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
FS16SM-5
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5 r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.25Ω ¡ID .......................................................................................... 16A
TO-3P
APPLICATION SMPS, DC-DC Converter, Battery charger, Power supply of Printer, Copier, TV, VCR, Personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 ± 30 16 48 125 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A W °C °C g Sep. 2001
Typical value
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ± 100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 250 ± 30 — — 2 — — 6.5 — — — — — — — — — Typ. — — — — 3 0.19 1.5 10.0 1050 220 45 20 40 110 50 1.5 — Max. — — ± 10 1 4 0.25 2.0 — — — — — — — — 2.0 1.00
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
IS = 8A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1
tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC
160
120
80
40
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 125W
DRAIN CURRENT ID (A)
40 7V 30 6V
DRAIN CURRENT ID (A)
VGS = 20V 10V 8V
TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 20 6V 7V PD = 125W 16 TC = 25°C Pulse Test 5.5V 12
20
8
5V
10 4V 0 0 10 20 30 40
5V
4
4.5V 4V
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 0.5 TC = 25°C Pulse Test 16 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.4 VGS = 10V 0.3 20V 0.2
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
12
8
ID = 30A
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
4
16A 8A 0 4 8 12 16 20
0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
24
3 2 100 7 5 3 2 10–1 100 23 5 7 101
16
8
0
VDS = 10V Pulse Test 23 5 7 102
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 103 7 5 Ciss
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω td(off) 102 7 5 3 2 101 100 23
102 7 5 3 2 101 7 5
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2
Coss
tf tr td(on) 5 7 101 23 5 7 102
Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 100 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test 25°C 24 75°C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
Tch = 25°C ID = 16A VDS = 50V 100V 200V
32
TC = 125°C
12
8
16
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 VGS = 10V ID = 8A Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 D=1 0.5 0.2 0.1 PDM
tw T D= tw T
1.0
0.8
0.6
0.4
–50
0
50
100
150
Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (°C)
Sep. 2001
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