FS16SM-9

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS16SM-9 HIGH-SPEED SWITCHING USE FS16SM-9 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.45Ω ¡ID ......................................................................................... 16A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 450 ±30 16 48 150 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 6.0 — — — — — — — — — Typ. — — — — 3 0.35 2.80 8.0 1700 230 40 30 50 170 60 1.5 — Max. — — ±10 1 4 0.45 3.60 — — — — — — — — 2.0 0.83 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) 101 7 5 3 2 100 7 5 3 2 tw=10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse 160 120 80 40 0 0 50 100 150 200 10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS =20V 10V 6V PD = 150W TC = 25°C Pulse Test 5V 12 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 150W DRAIN CURRENT ID (A) 40 VGS = 20V 30 10V 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 16 20 20 5V 10 4V 0 0 10 20 30 40 50 8 4 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25°C Pulse Test 0.8 VGS = 10V 20V ID = 25A 16 TC = 25°C Pulse Test 16A 8 8A 12 0.6 0.4 4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 32 24 3 2 101 7 5 3 2 100 0 10 23 125°C 75°C 16 TC = 25°C 8 0 0 4 8 12 16 20 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 103 7 5 Ciss SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) tf tr td(on) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 0 10 23 Coss 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS16SM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 TC = 125°C VGS = 0V Pulse Test 75°C 24 25°C GATE-SOURCE VOLTAGE VGS (V) 16 VDS = 100V 12 200V 400V 8 SOURCE CURRENT IS (A) 80 100 Tch = 25°C ID =16A 32 16 4 8 0 0 20 40 60 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D=1 7 5 0.5 3 2 0.2 0.1 10–1 7 5 3 2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 0.05 0.02 0.01 Single Pulse CHANNEL TEMPERATURE Tch (°C)