FS18SM-9

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE FS18SM-9 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.33Ω ¡ID .......................................................................................... 18A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 450 ±30 18 54 250 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 6.0 — — — — — — — — — Typ. — — — — 3 0.25 2.3 9.0 2200 300 45 40 80 200 80 1.5 — Max. — — ±10 1 4 0.33 3.0 — — — — — — — — 2.0 0.50 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 tw=10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 8V 16 PD = 250W 200 150 100 50 0 0 50 100 150 200 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 250W DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) VGS = 20V 10V 8V TC = 25°C Pulse Test 6V 6V 30 12 TC = 25°C Pulse Test 20 8 10 5V 4 5V 0 0 4 8 12 16 20 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25°C Pulse Test 32 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 0.8 24 0.6 VGS = 10V 20V 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 16 ID = 35A 25A 18A 9A 0 4 8 12 16 20 0.4 8 0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 3 2 101 7 5 3 2 100 0 10 23 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 32 24 16 8 0 0 4 8 12 16 20 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) Ciss 103 7 5 3 2 102 7 5 Coss 3 2 102 7 5 3 2 101 100 td(off) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω tf tr td(on) Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 23 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS18SM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 TC = 125°C VGS = 0V Pulse Test 25°C 24 75°C Tch = 25°C ID = 18A 16 VDS = 100V 12 32 8 200V 400V 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 –1 10 0.1 7 5 3 2 1.0 0.8 PDM tw T 0.6 0.4 –50 0 50 100 150 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)