FS20VSJ-3-T11

FX20VSJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G0273-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 150 V rDS(ON) (max) : 0.29 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Outline TO-220S 3 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –150 ±20 –20 –80 –20 –20 –80 70 – 55 to +150 – 55 to +150 1.2 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 30 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FX20VSJ-3 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. –150 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 0.23 0.25 –2.3 17.5 4470 248 115 15 42 273 114 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 0.29 0.32 –2.9 — — — — — — — — –1.5 1.79 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = –1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = –150 V, VGS = 0 V ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V ID = –10 A, VGS = – 4 V ID = –10 A, VGS = –10 V ID = –10 A, VDS = –10 V VDS = –10 V, VGS = 0 V, f = 1MHz VDD = – 80 V, ID = –10 A, VGS = –10 V, RGEN = RGS = 50 Ω IS = –10 A, VGS = 0 V Channel to case IS = – 20 A, dis/dt = 100 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 FX20VSJ-3 Performance Curves Drain Power Dissipation Derating Curve 100 –2 Maximum Safe Operating Area Drain Power Dissipation PD (W) –102 Drain Current ID (A) 80 –7 –5 –3 –2 tw = 10µs 100µs 1ms 10ms Tc = 25°C DC 60 –101 –7 –5 –3 –2 40 20 –100 –7 –5 0 0 50 100 150 200 –3 Single Pulse –2 –2 –3 –5 –7–101 –2 –3 –5–7–102 –2 –3 –5 –7–103 –2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) –20 Output Characteristics (Typical) –10 VGS = –10V Drain Current ID (A) –12 – 3V Drain Current ID (A) –16 Tc = 25°C – 8V Pulse Test – 6V – 4V VGS= –10V – 8V – 6V – 4V – 3V Tc = 25°C Pulse Test –8 –6 –8 PD = 70W – 2.5V –4 – 2.5V –4 –2 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 – 4.0 –5.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) –10 On-State Resistance vs. Drain Current (Typical) 0.5 –8 ID = – 30A Tc = 25°C Pulse Test 0.4 VGS= – 4V 0.3 –6 – 20A –4 –10A –2 Tc = 25°C Pulse Test 0 0 –10V 0.2 0.1 –2 –4 –6 –8 –10 00 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FX20VSJ-3 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 Transfer Characteristics (Typical) – 50 Tc = 25°C VDS = –10V – 40 Pulse Test VDS = –10V Pulse Test Tc = 25°C 75°C 125°C Drain Current ID (A) 3 2 – 30 101 7 5 3 2 – 20 –10 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 Drain Current ID (A) Switching Characteristics (Typical) 103 7 Tch = 25°C, VDD = – 80V VGS = –10V, RGEN = RGS = 50Ω 5 Ciss Switching Time (ns) Capacitance (pF) 3 2 3 2 103 7 5 3 2 td(off) tf 102 7 5 3 2 Coss tr 102 7 5 3 2 Tch = 25°C f = 1MHz VGS = 0V –2 –3 –5 –7 –101 –2 –3 Crss td(on) 101 0 –10 –5 –7 –102 101 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) –10 –20 Source-Drain Diode Forward Characteristics (Typical) Tc = 25°C Pulse Test Tc = 125°C 75°C 25°C Gate-Source Voltage VGS (V) Tch = 25°C ID = – 20A V DS = – 50V – 80V –100V –6 Source Current IS (A) –8 –16 –12 –4 –8 –2 –4 0 0 20 40 60 80 100 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FX20VSJ-3 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 3 2 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) – 4.0 VDS = –10V ID = –1mA – 3.2 VGS = –10V ID = 1/2 ID Pulse Test – 2.4 100 7 5 3 2 –1.6 – 0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch-c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 3 D = 1.0 2 VGS = 0V ID = –1mA 1.2 100 3 2 0.5 1.0 7 0.2 5 0.8 10–1 7 5 3 2 0.6 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D = tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RGEN RL Vout Monitor Vin Switching Waveform 10% 90% RGS VDD 90% 90% Vout td(on) 10% tr td(off) 10% tf Rev.1.00, Aug.20.2004, page 5 of 6 FX20VSJ-3 Package Dimensions TO-220S EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 1.2 Lead Material Cu alloy 10.5 max 4.5 1.5 max 1.3 1.5 max 8.6 ± 0.3 9.8 ± 0.5 +0.3 - 0.5 0 +0.3 -0 3.0 1 5 0.8 0.5 4.5 (1.5) Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Surface-mounted type Surface-mounted type Straight type Standard packing Taping Plastic Magazine (Tube) Quantity 1000 50 Standard order code Type name – T +Direction (1 or 2) +1 Type name Standard order code example FS20VSJ-3-T11 FS20VSJ-3 FS20VSJ-3-A1 Plastic Magazine 50 Type name +A1 (Tube) Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 ± 0.4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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