FS3UM-10

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE FS3UM-10 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) ................................................................. 4.4Ω ¡ID ............................................................................................ 3A TO-220 APPLICATION SMPS, DC-DC Converter, Battery charger, Power supply of Printer, Copier, TV, VCR, Personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 500 ±30 3 9 60 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A W °C °C g Sep. 2001 Typical value MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ± 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 ±30 — — 2 — — 1.0 — — — — — — — — — Typ. — — — — 3 3.4 3.4 1.5 300 35 6 13 10 30 30 1.5 — Max. — — ±10 1 4 4.4 4.4 — — — — — — — — 2.0 2.08 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 TC = 25°C Pulse Test VGS = 20V 10V 8V 6V PD = 60W tw=10µs 80 DRAIN CURRENT ID (A) 100µs 1ms 10ms DC 60 40 20 0 0 50 100 150 200 10–2 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 60W TC = 25°C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 8 VGS = 20V 10V 8V 4 6 3 4 6V 5V 2 5V 2 1 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test TC = 25°C Pulse Test 8 VGS = 10V 32 24 ID = 4A 16 3A 2A 1A 0 0 4 8 12 16 20 6 20V 4 8 2 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 8 6 3 2 100 7 5 3 2 10–1 –1 10 23 TC = 25°C 4 75°C 125°C 2 0 0 4 8 12 16 20 5 7 100 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 102 7 5 3 2 tf CAPACITANCE Ciss, Coss, Crss (pF) td(off) 101 7 Tch = 25°C Crss 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) td(on) 101 tr 7 5 10–1 2 3 5 7 100 23 5 7 101 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS3UM-10 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 10 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TC = 125°C VGS = 0V Pulse Test 25°C 6 75°C GATE-SOURCE VOLTAGE VGS (V) 16 SOURCE CURRENT IS (A) 20 Tch = 25°C ID = 3A VDS = 100V 200V 12 400V 8 8 4 4 2 0 0 4 8 12 16 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 VGS = 10V ID = 1A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2 0.1 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Sep. 2001