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FS50ASJ-03F-T13

FS50ASJ-03F-T13

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    FS50ASJ-03F-T13 - High-Speed Switching Use Nch Power MOS FET - Renesas Technology Corp

  • 数据手册
  • 价格&库存
FS50ASJ-03F-T13 数据手册
FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0238-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive Voltage : 4V VDSS : 30 V rDS(ON) (max) : 12.2 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline MP-3A 2, 4 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 50 200 50 50 200 50 – 55 to + 150 – 55 to + 150 0.32 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 6 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS50ASJ-03F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 30 ±20 — — 1.0 — — — — — — — — — — — — — — Typ. — — — — 1.5 9.2 13 0.23 45 2100 690 340 16 90 130 85 1.0 — 50 Max. — — 100 ±10 2.0 12.2 19 0.31 — — — — — — — — 1.5 2.5 — Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 4 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 15 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case IS = 25 A, dis/dt = – 50 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 FS50ASJ-03F Performance Curves Drain Power Dissipation Derating Curve 100 Maximum Safe Operating Area 3 2 Drain Power Dissipation PD (W) tw = 10µs 60 Drain Current ID (A) 80 102 7 5 3 2 101 7 5 3 2 Tc = 25°C Single Pulse 100 3 5 7 100 2 3 100µs 1ms 10ms DC 5 7 101 2 3 57 40 20 0 0 50 100 150 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 100 Output Characteristics (Typical) 50 Drain Current ID (A) Drain Current ID (A) 80 VGS = 10V 6V 5V Tc = 25°C Pulse Test 4V Tc = 25°C Pulse Test VGS = 10V 6V 5V 4V PD = 50W 40 60 30 3V 20 40 3V 20 PD = 50W 10 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source On-State Resistance rDS(ON) (mΩ) On-State Voltage vs. Gate-Source Voltage (Typical) 5.0 On-State Resistance vs. Drain Current (Typical) 50 Tc = 25°C Pulse Test Tc = 25°C Pulse Test 40 4.0 3.0 30 VGS = 4V 2.0 20 1.0 ID = 80A 50A 30A 10 10V 0 0 2 4 6 8 10 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS50ASJ-03F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 10 2 Transfer Characteristics (Typical) 100 Drain Current ID (A) 80 Tc = 25°C VDS = 10V Pulse Test VDS = 10V Pulse Test Tc = 25°C 60 75°C 125°C 40 20 0 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 Drain Current ID (A) Switching Characteristics (Typical) 103 7 5 4 3 2 102 7 5 4 3 2 101 100 Tch = 25°C f = 1MHz VGS = 0V Ciss 3 2 103 7 5 3 2 Switching Time (ns) Capacitance (pF) Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω td(off) tf Coss Crss tr td(on) 102 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 4 5 7 101 2 3 4 5 7 10 2 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 10 Source-Drain Diode Forward Characteristics (Typical) 100 Gate-Source Voltage VGS (V) Tch = 25°C ID = 50A VGS = 0V Pulse Test 8 Source Current IS (A) 80 6 VDS = 10V 20V 25V 60 4 40 Tc = 125°C 75°C 25°C 2 20 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS50ASJ-03F On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V I = 2A 5D 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (t°C) Drain-Source On-State Resistance rDS(ON) (25°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 3 D = 1.0 2 0.5 100 0.2 7 5 0.1 3 2 10–1 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.05 0.02 0.01 Single Pulse PDM tw D= T tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS50ASJ-03F Package Dimensions MP-3A EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 0.32 Lead Material Cu alloy 5.3 ± 0.2 1 ± 0.2 6.6 2.3 0.5 ± 0.1 10.4 max 6.1 ± 0.2 0.1 ± 0.1 2.5 min 0.76 ± 0.2 2.3±0.2 0.76 0.5 ± 0.2 1.4 ± 0.2 1 max Symbol 2.3 Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. A A1 A2 b D E e x y y1 ZD ZE Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Quantity Standard order code Standard order code example FS50ASJ-03F-T13 FS50ASJ-03F Taping 3000 Type name – T +Direction (1 or 2) +3 Plastic Magazine 75 Type name (Tube) Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 1 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0
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