FS50KMJ-03

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE FS50KMJ-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 w ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 19mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 60ns ¡Viso ............................................................................... 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30µH VGS = 0V VDS = 0V Conditions Ratings 30 ±20 50 200 50 50 200 25 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 15 21 0.375 28 1600 500 260 17 90 130 125 1.0 — 60 Max. — ±0.1 0.1 2.0 19 35 0.475 — — — — — — — — 1.5 5.0 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 25A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 tw = 10ms 40 30 100ms 1ms 10ms TC = 25°C Single Pulse DC 20 10 0 0 50 100 150 200 100 7 5 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 PD = 25W VGS = 10V TC = 25°C Pulse Test 50 5V 4V TC = 25°C Pulse Test 3V DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 5V 40 VGS = 10V 6V 60 4V 30 40 3V 20 PD = 25W 20 2V 10 2V 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 4.0 40 VGS = 4V 3.0 30 2.0 ID = 80A 20 10V 1.0 50A 30A 10 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 75°C 125°C VDS = 10V Pulse Test TC = 25°C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Tch = 25°C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 tf Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω td(off) Ciss 103 7 5 3 2 102 7 5 3 2 Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) tr td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 Tch = 25°C ID = 50A 8 SOURCE CURRENT IS (A) 75 6 VDS = 10V 20V 50 TC = 125°C 75°C 25°C 4 25V 2 25 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 1.2 1.0 0.8 100 0.1 7 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)