To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS50KMJ-06
HIGH-SPEED SWITCHING USE
FS50KMJ-06
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
123
2.6 ± 0.2
¡4V DRIVE ¡VDSS ................................................................................. 60V ¡rDS (ON) (MAX) ............................................................. 20mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 70ns ¡Viso ............................................................................... 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 50 200 50 50 200 30 –55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS50KMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 15 18 0.38 41 3000 580 300 22 65 250 160 1.0 — 70 Max. — ±0.1 0.1 2.0 20 24 0.50 — — — — — — — — 1.5 4.17 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
1ms 10ms 100ms TC = 25°C Single Pulse DC tw = 10ms
40
30
100ms
20
10
0
0
50
100
150
200
100 7 5 3
3
5 7100
23
5 7 101
2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V TC = 25°C Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 5V 4V TC = 25°C Pulse Test 3.5V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
80
4V
40
60
30
3V
40
3V
20
PD = 30W
20
PD = 30W
10
2.5V
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
TC = 25°C Pulse Test
1.6
40
VGS = 4V
1.2
ID = 80A
30
0.8
50A
20
10V
0.4
20A
10 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5
FORWARD TRANSFER ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
TC = 25°C
80
3 2 101 7 5 3 2
75°C 125°C
60
40
20
0
0
2
4
6
8
10
100 0 10
23
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103
SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω
7 5 3 2
Ciss
3 2
td(off)
103 7 5 3 2 102 7 5 3 2
tf
Coss Crss
102 7 5 3 2 101 0 10
tr td(on)
Tch = 25°C f = 1MHZ VGS = 0V
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
23
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KMJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test TC = 125°C
10
Tch = 25°C ID = 50A
8
VDS = 10V 20V 40V
80
6
60
75°C 25°C
4
40
2
20
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 100 0.2 7 0.1 PDM 5 3 0.05 tw 2 T 0.02 10–1 7 D= tw 0.01 5 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
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