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FS50KMJ-06F

FS50KMJ-06F

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    FS50KMJ-06F - High-Speed Switching Use Nch Power MOS FET - Renesas Technology Corp

  • 数据手册
  • 价格&库存
FS50KMJ-06F 数据手册
FS50KMJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0255-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS(ON) (max) : 14 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline TO-220FN 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — Ratings 60 ±20 50 200 50 50 200 25 – 55 to +150 – 55 to +150 2000 2.0 Unit V V A A A A A W °C °C V g Conditions VGS = 0 V VDS = 0 V L = 10 µH AC 1 minute, Terminal to case Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS50KMJ-06F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 60 ±20 — — 1.0 — — — — — — — — — — — — — — Typ. — — — — 1.5 12 14 0.30 60 3850 580 320 19 70 360 160 1.0 — 50 Max. — — 100 ±10 2.0 14 18 0.35 — — — — — — — — 1.5 5.0 — Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 4 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case IS = 50 A, dis/dt = – 100 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 FS50KMJ-06F Performance Curves Drain Power Dissipation Derating Curve 50 Maximum Safe Operating Area 5 3 2 Drain Power Dissipation PD (W) 30 20 10 0 0 Drain Current ID (A) 40 102 7 5 3 2 10 7 5 3 2 1 tw = 10µs 100µs 1ms 10ms 100ms DC 50 100 150 200 10 7 Tc = 25°C 5 Single Pulse 3 0 3 5 7 10 2 3 0 5 7 10 1 23 5 7 10 2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 100 3.5V Output Characteristics (Typical) 50 40 30 20 10 Tc = 25°C Pulse Test VGS = 10V 3V Drain Current ID (A) VGS = 10V 5V 4V Tc = 25°C Pulse Test 3V 60 40 20 0 0 Drain Current ID (A) 80 5V 4V 3.5V 2.5V PD = 30W 2.5V PD = 30W 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 1.6 1.2 0.8 0.4 0 0 ID = 80A Tc = 25°C Pulse Test On-State Resistance vs. Drain Current (Typical) 20 16 12 8 4 00 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 710 10V Tc = 25°C Pulse Test VGS = 4V 50A 20A 2 4 6 8 10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS50KMJ-06F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 3 2 101 7 5 3 2 10 0 10 0 Transfer Characteristics (Typical) 100 80 60 40 20 0 0 Tc = 25°C VDS = 10V Pulse Test Tc = 25°C Drain Current ID (A) 75°C 125°C VDS = 10V Pulse Test 2 4 6 8 10 23 5 7 101 23 5 7 102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 Drain Current ID (A) Switching Characteristics (Typical) 103 7 Tch = 25°C, VDD = 30V = 10V, RGEN = RGS = 50Ω V 5 GS Capacitance (pF) 3 2 10 7 5 3 Tch = 25°C 2 f = 1MHz VGS = 0V Coss Crss 3 Switching Time (ns) Ciss 3 2 10 7 5 3 2 101 0 10 23 2 td(off) tf tr td(on) 102 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 5 7 101 23 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 10 Tch = 25°C ID = 50A Source-Drain Diode Forward Characteristics (Typical) 100 80 60 40 20 0 0 VGS = 0V Pulse Test Gate-Source Voltage VGS (V) 6 4 2 0 0 VDS = 10V 20V 40V Source Current IS (A) 8 Tc = 125°C 75°C 25°C 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS50KMJ-06F On-State Resistance vs. Channel Temperature (Typical) 10 7 VGS = 10V ID = 25A 5 Pulse Test 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 1 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 3.2 2.4 1.6 0.8 0 VDS = 10V ID = 1mA –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch-c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 1.2 1.0 0.8 0.6 0.4 VGS = 0V ID = 1mA Transient Thermal Impedance Characteristics 10 7 D = 1.0 5 3 0.5 2 100 0.1 7 5 3 2 10–1 7 5 3 2 10 –2 –4 –3 –2 –1 0 1 0.2 0.05 0.02 0.01 Single Pulse PDM tw T D = tw T 1 2 –50 0 50 100 150 10 2 3 5 7 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7 10 2 3 5 710 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS50KMJ-06F Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS50KMJ-06F FS50KMJ-06F-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0
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