FS50SM-3

FS50SM-3 High-Speed Switching Use Nch Power MOS FET REJ03G1422-0200 (Previous: MEJ02G0120-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 10 V VDSS : 150 V rDS(ON) (max) : 31 mΩ ID : 50 A Integrated Fast Recovery Diode (TYP.) : 130 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 4 2, 4 1 1 1. 2. 3. 4. Gate Drain Source Drain 2 3 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 150 ±20 50 200 50 50 200 150 – 55 to +150 – 55 to +150 4.8 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FS50SM-3 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min 150 — — 2.0 — — — — — — — — — — — — — Typ — — — 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 — 130 Max — ±0.1 0.1 4.0 31 0.775 — — — — — — — — 1.5 0.83 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 80 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case IS = 50 A, dis/dt = – 100 A/µs Rev.2.00 Aug 07, 2006 page 2 of 6 FS50SM-3 Performance Curves Power Dissipation Derating Curve 200 3 2 Maximum Safe Operating Area tw = Power Dissipation PD (W) Drain Current ID (A) 160 120 102 7 5 3 2 101 7 5 3 2 10 0µ 10 s µs DC 80 40 0 0 50 100 150 200 100 Tc = 25°C 7 Single Pulse 5 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 100 VGS = 20V 10V 8V 7V 6V Output Characteristics (Typical) 50 VGS = 20V 10V 7V 6V Tc = 25°C Pulse Test 5V Drain Current ID (A) 60 Drain Current ID (A) 80 40 30 40 5V PD = 150W 20 20 Tc = 25°C Pulse Test 0 1.0 2.0 3.0 4.0 5.0 10 4V 0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source On-State Resistance rDS(ON) (mΩ) On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 ID = 100A On-State Resistance vs. Drain Current (Typical) 40 Tc = 25°C Pulse Test 32 1.6 80A 1.2 50A 24 VGS = 10V 20V 0.8 16 0.4 Tc = 25°C Pulse Test 20A 8 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Aug 07, 2006 page 3 of 6 FS50SM-3 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Transfer Characteristics (Typical) 100 Drain Current ID (A) 80 Tc = 25°C VDS = 10V Pulse Test VDS = 10V Pulse Test 60 TC = 25°C 75°C 125°C 40 20 0 0 4 8 12 16 20 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 2 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 Ciss Drain Current ID (A) Switching Characteristics (Typical) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 td(off) Capacitance C (pF) Switching Time (ns) tf tr td(on) Coss Crss Tch = 25°C f = 1MHz VGS = 0V 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) 20 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) 100 Gate-Source Voltage VGS (V) Tch = 25°C ID = 50A 16 VDS = 50V Source Current IS (A) 80 Tc = 125°C VGS = 0V Pulse Test 12 80V 100V 60 75°C 25°C 8 40 4 20 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.2.00 Aug 07, 2006 page 4 of 6 FS50SM-3 On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 25A 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25°C) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (t°C) Threshold Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 0.1 VGS = 0V ID = 1mA 1.2 1.0 0.8 PDM tw 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.2.00 Aug 07, 2006 page 5 of 6 FS50SM-3 Package Dimensions Package Name TO-3P* JEITA Package Code SC-65 RENESAS Code PRSS0004ZB-A Previous Code  MASS[Typ.] 4.8g Unit: mm 15.9Max 4.5 1.5 5.0 φ3.2 2 2 4 20.0 4.4 1.0 19.5Min 0.6 5.45 5.45 2.8 4 Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS50SM-3 FS50SM-3-A8 Straight type Static electricity prevention bag 20 Type name Lead form Plastic Magazine (Tube) 30 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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