FS50SM-5A

FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS(ON) (max) : 0.068 Ω ID : 50 A Outline TO-3P 4 2, 4 1 1. 2. 3. 4. Gate Drain Source Drain 1 2 3 3 Applications Switching mode power supply, plasma display TVs, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM PD Tch Tstg — Ratings 250 ±30 50 150 250 – 55 to +150 – 55 to +150 4.8 Unit V V A A W °C °C g Conditions VGS = 0 V VDS = 0 V Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS50SM-5A Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min. 250 ±30 — — 3.0 — — — — — — — — — — — — Typ. — — — — 3.5 0.052 1.3 35 3500 500 50 60 110 270 90 1.5 — Max. — — ±10 1 4.0 0.068 1.7 — — — — — — — — 2.0 0.50 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 150 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V Channel to case Rev.1.00, Aug.20.2004, page 2 of 6 FS50SM-5A Performance Curves Drain Power Dissipation Derating Curve 300 Maximum Safe Operating Area 103 7 5 3 tw = 10 µs 2 102 7 5 3 100 µs 2 101 1 ms 7 5 3 2 100 DC 7 5 3 Tc = 25°C 2 Single Pulse 10–1 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Drain Power Dissipation PD (W) 250 200 150 100 50 0 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Drain Current ID (A) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 160 Output Characteristics (Typical) 50 Tc = 25°C Pulse Test PD = 250W VGS = 20V 10V PD = 250W Tc = 25°C Pulse Test Drain Current ID (A) Drain Current ID (A) 40 120 8V VGS = 20V 7V 6V 30 80 7V 20 5.5V 10 40 6V 5.5V 5V 0 0 4 8 12 16 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) 10 Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) Tc = 25°C Pulse Test 8 On-State Resistance vs. Drain Current (Typical) 0.16 Tc = 25°C Pulse Test 0.12 VGS = 10V 0.08 6 ID = 75A 4 20V 50A 2 0.04 25A 0 0 4 8 12 16 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS50SM-5A Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 2 3 4 5 7 10 2 Transfer Characteristics (Typical) 50 Drain Current ID (A) 40 Tc = 25°C VDS = 30V Pulse Test VDS = 10V Pulse Test Tc = 25°C 30 75°C 125°C 20 10 0 0 4 8 12 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 103 7 5 103 7 5 4 3 2 Drain Current ID (A) Switching Characteristics (Typical) Ciss Switching Time (ns) Capacitance (pF) 2 102 7 5 2 101 7 5 td(off) tr tf Coss Crss 2 100 7 Tch = 25°C 5 f = 1MHz 2 VGS = 0V 10–1 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 102 7 5 4 3 Tch = 25°C 2 VDD = 150V VGS = 10V RGEN = RGS = 50Ω 1 10 100 2 3 4 5 7 101 td(on) 2 3 4 5 7 10 2 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) 16 160 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25°C ID = 50A VDS = 100V 200V Source Current IS (A) 12 120 Tc = 125°C 80 8 25°C 40 4 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS50SM-5A On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 25A 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 6 VDS = 10V ID = 1mA 5 Pulse Test 4 3 2 1 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch-c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.6 Transient Thermal Impedance Characteristics 100 7 D = 1.0 5 3 0.5 2 0.2 10–1 0.1 7 5 3 2 VGS = 0V ID = 1mA Pulse Test 1.2 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D = tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 7 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS50SM-5A Package Dimensions TO-3P EIAJ Package Code Conforms JEDEC Code  Mass (g) (reference value) 4.8 Lead Material Cu alloy 15.9 max 4.5 1.5 φ 3.2 5.0 2 2 4 1.0 20.0 20.5 max 0.6 5.45 5.45 2.8 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max 4 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS50SM-5A FS50SM-5A-A8 Straight type Static electricity prevention bag 20 Type name Lead form Plastic Magazine (Tube) 30 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6