FS50SMJ-2

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE FS50SMJ-2 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 19.5MIN. 4 20.0 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr ¡4V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 48m Ω ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ............. 90ns q q GATE w DRAIN e SOURCE r DRAIN e TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ± 20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A A W °C °C g Feb.1999 L = 50µH MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 37 40 0.93 40 3000 410 210 22 65 270 160 1.0 — 90 Max. — ±0.1 0.1 2.0 48 52 1.20 — — — — — — — — 1.5 1.78 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 TC = 25°C Single Pulse DC 80 tw = 10ms 100ms 60 40 1ms 10ms 100ms 20 0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 10V 5V TC = 25°C Pulse Test 4V 50 VGS = 10V 5V 3.5V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 40 3V 60 30 40 3V 20 PD = 70W 20 PD = 70W 10 2.5V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 4 80 3 ID = 80A 60 VGS = 4V 10V 2 50A 40 1 20A 20 0 0 0 2 4 6 8 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2 TC = 25°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 80 60 75°C 125°C 40 20 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25°C SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 tf Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 104 VGS = 0V CAPACITANCE Ciss, Coss, Crss (pF) Ciss 103 7 5 3 2 102 7 5 3 2 SWITCHING TIME (ns) 7 f = 1MHZ 5 3 2 td(off) Coss Crss 102 7 5 4 3 2 tr td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50SMJ-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 Tch = 25°C ID = 50A 8 80 6 60 4 VDS = 20V 40V 80V 40 TC = 125°C 75°C 25°C 2 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C)