FS50VSJ-3

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE FS50VSJ-3 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 –0.5 +0.3 0 +0.3 –0 1 5 0.8 B 0.5 qwe wr 2.6 ± 0.4 ¡4V DRIVE ¡VDSS ……………………………………………...150V ¡rDS (ON) (MAX) …………………………………...30mΩ ¡ID …………………………………………………...50A ¡Integrated Fast Recovery Diode (TYP.) ……...125ns q q w e r e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 150 ± 20 50 200 50 50 200 125 –55 ~ +150 –55 ~ +150 1.2 Unit V V A A A A A W °C °C g Sep. 2000 L = 100µH 4.5 GATE DRAIN SOURCE DRAIN (1.5) MITSUBISHI Nch POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25° C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Test conditions Limits Min. 150 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 23 24 0.58 62 8200 870 440 54 110 850 340 1.0 — 125 Max. — ± 0.1 0.1 2.0 30 32 0.75 — — — — — — — — 1.5 1.00 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns VDD = 80V, ID = 25A, VGS = 10V, R GEN = RGS = 50 Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2 POWER DISSIPATION PD (W) 160 DRAIN CURRENT ID (A) 120 102 7 5 3 2 101 7 5 3 2 tw = 10ms 100ms 1ms 10ms 80 40 0 0 50 100 150 200 100 DC 7 TC = 25°C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 10V 5V 4V 3V CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 10V 5V 4V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 40 60 3V 30 40 PD = 125W 20 2.5V 20 10 TC = 25°C Pulse Test 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2000 MITSUBISHI Nch POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 ID = 100A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 TC = 25°C Pulse Test 1.6 80A DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 32 1.2 50A 24 VGS = 4V 10V 0.8 16 0.4 TC = 25°C Pulse Test 20A 8 0 0 0 2 4 6 8 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 VDS = 10V Pulse Test TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 2 4 6 8 10 100 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 23 td(off) tf Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω Coss 103 7 5 3 2 Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) tr td(on) 102 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) Sep. 2000 MITSUBISHI Nch POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 Tch = 25°C ID = 50A VDS = 50V 8 80 TC = 125°C 6 80V 100V 60 75°C 25°C 4 40 2 20 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 0.5 5 3 0.2 2 0.1 10–1 7 5 3 2 D = 1.0 1.2 1.0 0.8 PDM tw 0.6 0.05 0.02 0.01 Single Pulse T D= tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Sep. 2000 CHANNEL TEMPERATURE Tch (°C)