To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
FS5ASH-06
OUTLINE DRAWING
6.5 5.0 ± 0.2
Dimensions in mm
r
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 ± 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr
¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 0.15 Ω ¡ID ............................................................................................ 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 45ns
q
q GATE w DRAIN e SOURCE r DRAIN
e
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ±10 5 20 5 5 20 20 –55 ~ +150 –55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 2.5V ID = 2A, VGS = 4V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 0.11 0.13 0.22 10 540 120 40 12 20 50 32 1.0 — 45 Max. — ± 0.1 0.1 1.2 0.15 0.20 0.3 — — — — — — — — 1.5 6.25 —
Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 101 7 5 3 2 100 7 5 3 2
tw = 10ms
32
100ms 1ms 10ms DC
24
16
8
0
0
50
100
150
200
10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 5V 4V 3V 2.5V Tc = 25°C Pulse Test 2V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
PD = 20W VGS = 5V 4V 3V Tc = 25°C Pulse Test 2.5V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
6
8
2V
4
1.5V
4
1.5V
2
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200
Tc = 25°C Pulse Test VGS = 2.5V 4V
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
160
3.0
120
2.0
ID = 8A 5A 2A
80
1.0
40 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
1.0
2.0
3.0
4.0
5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
VDS = 5V Pulse Test TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
0
0
1.0
2.0
3.0
4.0
5.0
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ
VGS = 0V Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2
Tch = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω td(off) tf tr td(on)
Coss Crss
101
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
100 –1 10
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
5.0
Tch = 25°C ID = 5A
4.0
SOURCE CURRENT IS (A)
VDS = 10V
16
TC = 125°C
3.0
20V 40V
12
75°C 25°C
2.0
8
1.0
4
0
0
2
4
6
8
10
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 2.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
1.6
1.2
0.8
0.4
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 2 0.2 100 7 5 3 2
0.1 0.05 0.02 0.01 Single Pulse
1.2
1.0
0.8
PDM
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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