FS70VS-2

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE FS70VS-2 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.3 3.0 +0.5 – 0 –0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 ± 0.4 ¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 20m Ω ¡ID ......................................................................................... 70A ¡Integrated Fast Recovery Diode (TYP.) ........... 120ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ±20 70 280 70 70 280 125 –55 ~ +150 –55 ~ +150 1.2 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH 4.5 (1.5) MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25° C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Test conditions Limits Min. 100 — — 2.0 — — — — — — — — — — — — — Typ. — — — 3.0 14 0.49 53 6540 1150 500 95 175 330 190 1.0 — 120 Max. — ±0.1 0.1 4.0 20 0.7 — — — — — — — — 1.5 1.00 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 100ms 1ms 10ms tw = 10ms 160 120 80 101 7 5 3 2 40 0 0 50 100 150 200 DC 100 7 TC = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 20V 10V 8V TC = 25°C Pulse Test DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 6V VGS = 20V 10V 8V 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 40 5V 60 PD = 125W 30 40 5V 20 20 10 4V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 16 VGS = 10V 20V 1.2 100A 70A 12 0.8 8 0.4 30A 4 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 4 8 12 16 20 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25°C SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 Tch = 25°C 2 VDD = 50V 101 tf tr td(on) 105 f = 1MHZ 104 7 5 3 2 103 7 5 3 2 Ciss Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 VGS = 0V 5 3 2 td(off) VGS = 10V RGEN = RGS = 50Ω 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 100 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 16 SOURCE CURRENT IS (A) Tch = 25°C ID = 70A 80 12 VDS = 20V 60 TC = 125°C 8 50V 80V 40 75°C 25°C 4 20 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 0.5 5 3 0.2 2 0.1 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse D = 1.0 1.2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)