FS70VSJ-06F-A1

FS70VSJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0265-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS(ON) (max) : 7.0 mΩ ID : 70 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns Outline TO-220S 4 2, 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 60 ±20 70 280 70 70 280 125 – 55 to +150 – 55 to +150 1.2 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS70VSJ-06F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 60 ±20 — — 1.0 — — — — — — — — — — — — — — Typ. — — — — 1.5 5.5 6.6 0.19 110 8500 1300 720 42 130 800 330 1.0 — 70 Max. — — 100 ±10 2.0 7.0 8.3 0.25 — — — — — — — — 1.5 1.0 — Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VGS = 4 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 35 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 35 A, VGS = 0 V Channel to case IS = 70 A, dis/dt = –100 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 FS70VSJ-06F Performance Curves Drain Power Dissipation Derating Curve 150 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 3 Maximum Safe Operating Area Drain Power Dissipation PD (W) 125 100 75 50 25 0 Drain Current ID (A) tw = 10 µs 100 µs 1 ms 10 ms 100 ms DC 5 7 101 2 3 5 7 102 Tc = 25°C Single Pulse 5 7 10 0 2 3 0 50 100 150 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 100 Output Characteristics (Typical) 50 VGS = 10V 5V 40 4V 30 3V Drain Current ID (A) 80 Drain Current ID (A) 3V 3.5V 2.5V VGS = 10V 60 5V 4V 3.5V PD = 125W 2.5V 40 20 20 10 Tc = 25°C Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 Tc = 25°C Pulse Test 0.8 1.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 1.0 On-State Resistance vs. Drain Current (Typical) 10 Tc = 25°C Pulse Test Tc = 25°C Pulse Test 8 0.8 VGS = 4V 6 0.6 ID = 100A 70A 10V 0.4 4 0.2 30A 2 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 0 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS70VSJ-06F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 103 7 VDS = 10V 5 Pulse Test 4 3 2 102 7 5 4 3 2 101 100 Transfer Characteristics (Typical) 200 Drain Current ID (A) 160 Tc = 25°C VDS = 10V Pulse Test 120 Tc = 25°C 80 75°C 125°C 40 0 0 2 4 6 8 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 3 2 Drain Current ID (A) Switching Characteristics (Typical) 103 7 5 4 3 2 tr Capacitance (pF) 104 7 5 3 2 103 7 5 Ciss Switching Time (ns) Tch = 25°C f = 1MHz VGS = 0V td(off) tf Coss Crss 3 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 102 7 5 td(on) 4 3 Tch = 25°C 2 VDD = 30V VGS = 10V 1 RGEN = RGS = 50Ω 10 100 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 10 100 Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25°C ID = 70A Source Current IS (A) 8 80 Tc = 125°C 60 6 VDS = 10V 20V 4 40 40V 2 75°C 25°C 20 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS70VSJ-06F On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = 10V 5 ID = 35A 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Drain-Source On-State Resistance rDS(ON) (25°C) Drain-Source On-State Resistance rDS(ON) (t°C) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch-c) (°C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 3 2 VGS = 0V ID = 1mA 1.2 1.0 0.8 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM tw T 0.6 0.05 10–1 0.02 7 5 0.01 3 Single Pulse 2 D = tw T 0.4 –50 0 50 100 150 10–2 10–4 2 3 5 710–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS70VSJ-06F Package Dimensions TO-220S EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 1.2 Lead Material Cu alloy 10.5 max 4.5 1.5 max 1.3 1.5 max 8.6 ± 0.3 9.8 ± 0.5 +0.3 - 0.5 0 +0.3 -0 3.0 1 5 0.8 0.5 4.5 (1.5) Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Surface-mounted type Surface-mounted type Straight type Standard packing Taping Plastic Magazine (Tube) Quantity 1000 50 Standard order code Type name – T +Direction (1 or 2) +1 Type name Standard order code example FS70VSJ-06F-T11 FS70VSJ-06F FS70VSJ-06F-A1 Plastic Magazine 50 Type name +A1 (Tube) Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 ± 0.4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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