To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp. Customer Support Dept. April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS7UM-5
HIGH-SPEED SWITCHING USE
FS7UM-5
OUTLINE DRAWING
10.5MAX. r 3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6 3.8MAX. 1.0
12.5MIN.
0.8
2.54
2.54 4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ............................................................................... 250V ¡rDS (ON) (MAX) ............................................................. 0.80Ω ¡ID ........................................................................................... 7A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 250 ±30 7 21 75 –55 ~ +150 –55 ~ +150 2.0
Unit V V A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 250 ±30 — — 2 — — 2.3 — — — — — — — — — Typ. — — — — 3 0.63 1.90 3.5 370 80 16 15 22 50 26 1.5 — Max. — — ±10 1 4 0.80 2.40 — — — — — — — — 2.0 1.67
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 3A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) 101 7 5 3 2 100µs 1ms 10ms TC = 25°C Single Pulse DC
tw=10µs
80
60
40
20
100 7 5 3 2
0
0
50
100
150
200
10–1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 7V PD = TC = 25°C 75W Pulse Test
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 75W DRAIN CURRENT ID (A) 16 VGS = 20V 10V DRAIN CURRENT ID (A) TC = 25°C Pulse Test 7V 8
6V 6
12
8
6V
4
4
5V
2
5V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-5
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 TC = 25°C Pulse Test 4
TC = 25°C Pulse Test 32
24 ID = 14A
3 VGS = 10V 2 20V
16
8
7A 3A 0 4 8 12 16 20
1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
8
6
3 2 100 7 5 3 2 10–1 0 10 23 125°C
TC = 25°C 75°C
4
2
VDS = 10V Pulse Test 5 7 101 23 5 7 102
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 Tch = 25°C f = 1MHz VGS = 0V Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 10–1 23 5 7 100 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω
CAPACITANCE Ciss, Coss, Crss (pF)
Coss
Crss
td(off) tf tr td(on) 23 5 7 101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS7UM-5
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test 75°C 12 25°C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
Tch = 25°C ID = 7A
VDS = 50V 100V 16
TC = 125°C
12
200V
8
8
4
4
0
0
4
8
12
16
20
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2
0.1
1.0
0.8
PDM 0.05 0.02 0.01 Single Pulse
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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