FX20ASJ-06

FX20ASJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1440-0200 (Previous: MEJ02G0274-0101) Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : – 60 V rDS(ON) (max) : 97 mΩ ID : – 20 A Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 3 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –60 ±20 –20 –80 –20 –20 –80 35 – 55 to +150 – 55 to +150 0.32 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FX20ASJ-06 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min –60 — — –1.3 — — — — — — — — — — — — — — Typ — — — –1.8 73 119 –0.73 10.9 2370 306 147 15 37 131 72 –1.0 — 50 Max — ±0.1 –0.1 –2.3 97 166 –0.97 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = –1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = –60 V, VGS = 0 V ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V ID = –10 A, VGS = – 4 V ID = –10 A, VGS = –10 V ID = –10 A, VDS = –10 V VDS = –10 V, VGS = 0 V, f = 1MHz VDD = –30 V, ID = –10 A, VGS = –10 V, RGEN = RGS = 50 Ω IS = –10 A, VGS = 0 V Channel to case IS = –20 A, dis/dt = 100 A/µs Rev.2.00 Aug 07, 2006 page 2 of 6 FX20ASJ-06 Performance Curves Power Dissipation Derating Curve 50 –2 Maximum Safe Operating Area Power Dissipation PD (W) –102 tw Drain Current ID (A) 40 –7 –5 –3 –2 1m = 10 µs s 0µ 10 s 30 –101 –7 –5 –3 –2 DC 20 10 –100 –7 –5 Tc = 25°C Single Pulse 0 0 50 100 150 200 –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) –50 PD = 35W –8V VGS = –10V Output Characteristics (Typical) –20 VGS = –10V –6V Tc = 25°C Pulse Test –4V Drain Current ID (A) Drain Current ID (A) –40 –16 Tc = 25°C Pulse Test –30 –8V –6V –5V –12 –5V PD = 35W –20 –4V –8 –10 –3V –4 –3V 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) –10 On-State Resistance vs. Drain Current (Typical) 200 Tc = 25°C Pulse Test Tc = 25°C Pulse Test VGS = –4V –8 160 –6 ID = 120 –10V –4 –40A 80 –2 –10A –20A 40 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 0 0 –2 –4 –6 –8 –10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Aug 07, 2006 page 3 of 6 FX20ASJ-06 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 4 3 2 TC = 25°C 75°C Transfer Characteristics (Typical) –50 VDS = –10V Pulse Test 125°C Drain Current ID (A) –40 –30 101 7 5 4 3 2 –20 –10 Tc = 25°C VDS = –10V Pulse Test 0 –2 –4 –6 –8 –10 0 100 0 –10 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 3 2 Ciss 3 2 Drain Current ID (A) Switching Characteristics (Typical) td(off) Capacitance C (pF) 103 7 5 4 3 2 Switching Time (ns) Tch = 25°C f = 1MHz VGS = 0V Coss 102 7 5 4 3 2 tf tr td(on) 102 7 Crss 5 4 3 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 101 7 5 4 3 –5 –7 –100 Tch = 25°C VDD = –30V VGS = –10V RGEN = RGS = 50Ω –2 –3 –4–5 –7 –101 –2 –3 –4–5 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) –10 –50 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) –8 VDS = –10V –20V –40V Source Current IS (A) Tch = 25°C ID = –20A –40 TC = –6 –30 125°C 75°C –4 –20 25°C –2 –10 0 0 10 20 30 40 50 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.2.00 Aug 07, 2006 page 4 of 6 FX20ASJ-06 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 4 3 2 Drain-Source On-State Resistance rDS(ON) (25°C) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (t°C) Threshold Voltage vs. Channel Temperature (Typical) –4.0 VGS = –10V ID = –10A Pulse Test VDS = –10V ID = –1mA –3.2 –2.4 100 7 5 4 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 D = 1.0 3 0.5 2 0.2 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T VGS = 0V ID = –1mA 1.2 100 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Vin Monitor D.U.T. RGEN RL Vout Monitor Switching Waveform 10% 90% 90% 90% RGS VDD Vout td(on) 10% tr td(off) 10% tf Rev.2.00 Aug 07, 2006 page 5 of 6 FX20ASJ-06 Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code  MASS[Typ.] 0.32g Unit: mm 1 ± 0.2 6.6 5.3 ± 0.2 2.3 0.5 ± 0.2 6.1 ± 0.2 10.4Max 0.1 ± 0.1 1Max 2.5Min 0.76 ± 0.2 0.76 0.5 ± 0.2 2.3 ± 0.2 2.3 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 Standard order code example FX20ASJ-06-T13 FX20ASJ-06 75 Type name Plastic Magazine (Tube) Note: Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 1 1.4 ± 0.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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