FX30KMJ-3

FX30KMJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1448-0200 (Previous: MEJ02G0291-0101) Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 3 1 1. Gate 2. Drain 3. Source 1 2 3 2 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — Ratings –150 ±20 –30 –120 –30 –30 –120 35 – 55 to +150 – 55 to +150 2000 2.0 Unit V V A A A A A W °C °C V g Conditions VGS = 0 V VDS = 0 V L = 30 µH AC for 1 minute, Terminal to case Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FX30KMJ-3 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min –150 — — –1.3 — — — — — — — — — — — — — — Typ — — — –1.8 78 85 –1.17 41.3 11430 674 320 61 99 878 330 –1.0 — 100 Max — ±0.1 –0.1 –2.3 100 111 –1.50 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Test Conditions ID = –1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = –150 V, VGS = 0 V ID = –1 mA, VDS = –10 V ID = –15 A, VGS = –10 V ID = –15 A, VGS = – 4 V ID = –15 A, VGS = –10 V ID = –15 A, VDS = –10 V VDS = –10 V, VGS = 0 V, f = 1MHz VDD = –80 V, ID = –15 A, VGS = –10 V, RGEN = RGS = 50 Ω IS = –15 A, VGS = 0 V Channel to case IS = –30 A, dis/dt = 100 A/µs Rev.2.00 Aug 07, 2006 page 2 of 6 FX30KMJ-3 Performance Curves Power Dissipation Derating Curve 50 –2 tw Maximum Safe Operating Area Power Dissipation PD (W) –102 Drain Current ID (A) 40 –7 –5 –3 –2 10 = 10 s 1m 0µ µs s 30 –101 –7 –5 –3 –2 D C 20 10 –100 –7 –5 –3 Single Pulse –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 Tc = 25°C 0 0 50 100 150 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) –50 VGS = –10V –6V –5V –4V Output Characteristics (Typical) –20 VGS = –10V –6V –4V –3V Tc = 25°C Pulse Test –3.5V Tc = 25°C Pulse Test Drain Current ID (A) –30 –3V Drain Current ID (A) –40 –16 –12 PD = 35W –20 –8 –2.5V –10 PD = 35W –4 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) –10 On-State Resistance vs. Drain Current (Typical) 200 Tc = 25°C Pulse Test –8 Tc = 25°C Pulse Test 160 –6 120 VGS = –4V –4 ID = –45A –30A 80 –10V –2 –15A 40 0 0 –2 –4 –6 –8 –10 00 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Aug 07, 2006 page 3 of 6 FX30KMJ-3 Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 3 2 TC = 25°C 75°C 125°C Transfer Characteristics (Typical) –50 Drain Current ID (A) –40 –30 101 7 5 3 2 –20 –10 Tc = 25°C VDS = –10V Pulse Test 0 –2 –4 –6 –8 –10 VDS = –10V Pulse Test –2 –3 –5 –7 –101 –2 –3 –5 –7 0 100 –7 –100 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 105 7 5 3 2 Drain Current ID (A) Switching Characteristics (Typical) 2 Capacitance C (pF) Switching Time (ns) Tch = 25°C f = 1MHz VGS = 0V Ciss 103 7 5 3 2 td(off) 104 7 5 3 2 tf 103 7 5 3 2 Coss Crss –5 –7 –101 –2 –3 –5 –7–102 102 7 5 3 tr td(on) Tch = 25°C VGS = –10V VDD = –80V RGEN = RGS = 50Ω 102 0 –10 –2 –3 2 –7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102 –2 –3 –5–7 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) –10 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) –50 Gate-Source Voltage VGS (V) Tch = 25°C ID = –30A VGS = 0V Pulse Test –8 Source Current IS (A) –40 TC = 125°C 75°C 25°C –6 VDS = –50V –80V –100V –30 –4 –20 –2 –10 0 0 40 80 120 160 200 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.2.00 Aug 07, 2006 page 4 of 6 FX30KMJ-3 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 3 2 Drain-Source On-State Resistance rDS(ON) (25°C) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (t°C) Threshold Voltage vs. Channel Temperature (Typical) –4.0 VGS = –10V ID = –15A Pulse Test VDS = –10V ID = –1mA –3.2 –2.4 100 7 5 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 Channel Temperature Tch (°C) Channel Temperature Tch (°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 D = 1.0 3 0.5 2 VGS = 0V ID = –1mA 1.2 100 0.2 7 5 0.1 3 0.05 2 0.02 PDM tw T 1.0 0.8 10–1 7 5 3 2 0.01 Single Pulse 0.6 D= tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Vin Monitor D.U.T. RGEN RL Vout Monitor Switching Waveform 10% 90% 90% 90% RGS VDD Vout td(on) 10% tr td(off) 10% tf Rev.2.00 Aug 07, 2006 page 5 of 6 FX30KMJ-3 Package Dimensions Package Name TO-220FN JEITA Package Code  RENESAS Code PRSS0003AB-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Standard order code example FX30KMJ-3 FX30KMJ-3-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note: Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. 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