FY6BCH-02

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE FY6BCH-02 OUTLINE DRAWING ➇ ➄ Dimensions in mm 6.4 4.4 ➀ 3.0 ➃ 1.1 0.275 0.65 ➀ ➇ DRAIN ➁ ➂ ➅ ➆ SOURCE ➃ ➄ GATE ➇ ➀ ➃ ➄ G 2.5V DRIVE G VDSS .................................................................................. 20V G rDS (ON) (MAX) .............................................................. 30mΩ G ID ........................................................................................... 6A ➁➂ ➅➆ TSSOP8 APPLICATION Li-ion battery, DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 ±10 6 42 6 1.5 6.0 1.5 –55 ~ +150 –55 ~ +150 0.035 Unit V V A A A A A W °C °C g Sep. 2001 L = 10µH MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 4V ID = 3A, VGS = 2.5V ID = 6A, VGS = 4V ID = 6A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 — — 0.5 — — — — — — — — — — — — — — Typ. — — — 0.9 25 32 0.15 13.0 800 280 200 20 55 90 100 — — 50 Max. — ±0.1 0.1 1.3 30 40 0.18 — — — — — — — — 1.10 83.3 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.5A, VGS = 0V Channel to ambient IS = 1.5A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10µs 100µs 1.6 101 7 5 3 2 1ms 10ms 1.2 0.8 100 7 5 3 2 100ms 0.4 10–1 TC = 25°C 0 0 50 100 150 200 7 5 Single Pulse DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 10 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 4V 3V 2.5V 2V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 12 VGS = 5V 4V 3V 2.5V 2V TC = 25°C Pulse Test 1.5V PD = 1.5W 8 6 PD = 1.5W 8 4 4 2 1.5V TC = 25°C Pulse Test 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 0.8 80 0.6 ID = 12A 6A 3A 60 VGS = 2.5V 0.4 40 4V 0.2 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 TC = 25°C 3 75°C 2 125°C DRAIN CURRENT ID (A) 12 FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 4 3 2 8 4 0 0 1.0 2.0 3.0 4.0 5.0 100 5 7 100 2 3 4 5 7 101 2 3 45 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 4 3 2 Ciss 102 SWITCHING TIME (ns) 7 5 4 tr 3 2 td(on) tf Coss Crss 102 7 5 4 TCh = 25°C 3 f = 1MHZ VGS = 0V 2 10–1 2 3 4 5 7 100 101 7 5 TCh = 25°C 4 VDD = 10V 3 VGS = 4V RGEN = RGS = 50Ω 2 10–1 2 3 4 5 7 100 2 3 4 5 7 101 2 3 4 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6BCH-02 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 5.0 TCh = 25°C ID = 6A 4.0 16 3.0 VDS = 7V 10V 15V 12 TC = 125°C 75°C 25°C 2.0 8 1.0 4 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 4V 7 ID = 6A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 1.6 1.2 100 7 5 3 2 0.8 0.4 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 D = 1.0 5 3 0.5 2 1 0.2 7 0.1 5 3 0.05 2 1.2 10 1.0 PDM 0.02 0.01 Single Pulse tw T D= tw T 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep. 2001 CHANNEL TEMPERATURE Tch (°C)